Influence of High-Energy Proton Irradiation on β-GaO Nanobelt Field-Effect Transistors.

The robust radiation resistance of wide-band gap materials is advantageous for space applications, where the high-energy particle irradiation deteriorates the performance of electronic devices. We report on the effects of proton irradiation of β-GaO nanobelts, whose energy band gap is ∼4.85 eV at room temperature.

Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers.

Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial applications. However, the development of a direct method for graphene growth on an arbitrary substrate remains challenging. Here, we demonstrate a bottom-up and transfer-free growth method for preparing multilayer graphene using a self-assembled monolayer (trimethoxy phenylsilane) as the carbon source.

Photosensitive cadmium telluride thin-film field-effect transistors.

We report on the graphene-seeded growth and fabrication of photosensitive Cadmium telluride (CdTe)/graphene hybrid field-effect transistors (FETs) subjected to a post-growth activation process. CdTe thin films were selectively grown on pre-defined graphene, and their morphological, electrical and optoelectronic properties were systemically analyzed before and after the CdCl2 activation process. CdCl2-activated CdTe FETs showed p-type behavior with improved electrical features, including higher electrical conductivity (reduced sheet resistance from 1.

Defect-engineered graphene chemical sensors with ultrahigh sensitivity.

We report defect-engineered graphene chemical sensors with ultrahigh sensitivity (e.g., 33% improvement in NO2 sensing and 614% improvement in NH3 sensing).

Body-Attachable and Stretchable Multisensors Integrated with Wirelessly Rechargeable Energy Storage Devices.

A stretchable multisensor system is successfully demonstrated with an integrated energy-storage device, an array of microsupercapacitors that can be repeatedly charged via a wireless radio-frequency power receiver on the same stretchable polymer substrate. The integrated devices are interconnected by a liquid-metal interconnection and operate stably without noticeable performance degradation under strain due to the skin attachment, and a uniaxial strain up to 50%.

Self-aligned growth of CdTe photodetectors using a graphene seed layer.

We demonstrate the self-aligned growth of CdTe photodetectors using graphene as a pre-defined seed layer. Defects were generated in the graphene prior to growth to act as CdTe nucleation sites. Self-aligned CdTe structures were grown selectively on the pre-defined graphene region.

Single CdTe microwire photodetectors grown by close-spaced sublimation method.

We demonstrate single CdTe microwire field-effect transistors (FETs) that are highly sensitive to ultraviolet (UV) light. Dense CdTe microwires were catalytically grown using a close-spaced sublimation system. Structural, morphological and transport properties in conjunction with the optoelectronic properties were systemically investigated.

Post-growth CdCl₂ treatment on CdTe thin films grown on graphene layers using a close-spaced sublimation method.

We investigated the morphological, structural and optical properties of CdCl₂-treated cadmium telluride (CdTe) thin films deposited on defective graphene using a close-spaced sublimation (CSS) system. Heat treatment in the presence of CdCl₂ caused recrystallization of CSS-grown CdTe over the as-deposited structures. The preferential (111) orientation of as-deposited CdTe films was randomized after post-growth CdCl₂ treatment.

GaN-based light-emitting diodes on graphene-coated flexible substrates.

We demonstrate GaN-based thin light-emitting diodes (LEDs) on flexible polymer and paper substrates covered with chemical vapor deposited graphene as a transparent-conductive layer. Thin LEDs were fabricated by lifting the sapphire substrate off by Excimer laser heating, followed by transfer of the LEDs to the flexible substrates. These substrates were coated with tri-layer graphene by a wet transfer method.

GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes.

We demonstrate AuCl3-doped graphene transparent conductive electrodes integrated in GaN-based ultraviolet (UV) light-emitting diodes (LEDs) with an emission peak of 363 nm. AuCl3 doping was accomplished by dipping the graphene electrodes in 5, 10 and 20 mM concentrations of AuCl3 solutions. The effects of AuCl3 doping on graphene electrodes were investigated by current-voltage characteristics, sheet resistance, scanning electron microscope, optical transmittance, micro-Raman scattering and electroluminescence images.

Flexible graphene-based chemical sensors on paper substrates.

Graphene-based, flexible NO(2) sensors on paper substrates exhibited an immediate response (32-39%) once exposed to 200 ppm NO(2) gas under a strain of 0.5%. Chemical vapor deposition-grown graphene with a supporting poly(methyl methacrylate) layer was transferred onto paper substrates, followed by formation of two electrodes using silver paste.