A bulk form Cu-based ferromagnetic semiconductor (La,Ba)(Cu,Mn)SO with the Curie temperature up to 170 K.

We report the ferromagnetism in a new bulk form Cu-based magnetic semiconductor (La,Ba)(Cu,Mn)SO, which is iso-structural to the prototypical iron-based 1111-type superconductor LaFeAsO. Starting from the parent compound LaCuSO, carriers are introduced via the substitutions of La for Ba while spins are introduced via the substitutions of Cu for Mn. Spins are mediated by carriers, which develops into the long range ferromagnetic ordering.

High-Yield Production of Quantum Corrals in a Surface Reconstruction Pattern.

The power of surface chemistry to create atomically precise nanoarchitectures offers intriguing opportunities to advance the field of quantum technology. Strategies for building artificial electronic lattices by individually positioning atoms or molecules result in precisely tailored structures but lack structural robustness. Here, taking the advantage of strong bonding of Br atoms on noble metal surfaces, we report the production of stable quantum corrals by dehalogenation of hexabromobenzene molecules on a preheated Au(111) surface.

Polaronic defects in monolayer CeO: Quantum confinement effect and strain engineering.

We uncover the structure, stability, and electronic properties of polaronic defects in monolayer (ML) CeO by means of first-principles calculations, with special attention paid to the quantum confinement effect induced by dimensionality reduction. Results show that the polaron can be more stabilized in ML CeO than in the bulk, while formation of oxygen vacancy (Vo) and polaron-vacancy complexes [(Vo-1polaron), (Vo-2polaron)] tends to be more difficult. The polaronic defect states sit deeper in energy within the bandgap of ML CeO compared to the bulk case.

Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text]As[Formula: see text].

We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn[Formula: see text]Co[Formula: see text])[Formula: see text]As[Formula: see text] which has a maximum [Formula: see text] [Formula: see text] 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by [Formula: see text] 0.

From Trivial Kondo Insulator Ce_{3}Pt_{3}Bi_{4} to Topological Nodal-Line Semimetal Ce_{3}Pd_{3}Bi_{4}.

Using the density functional theory combined with dynamical mean-field theory, we have performed systematic study of the electronic structure and its band topology properties of Ce_{3}Pt_{3}Bi_{4} and Ce_{3}Pd_{3}Bi_{4}. At high temperatures (∼290  K), the electronic structures of both compounds resemble the open-core 4f density functional calculation results. For Ce_{3}Pt_{3}Bi_{4}, clear hybridization gap can be observed below 72 K, and its coherent momentum-resolved spectral function below 18 K exhibits an topologically trivial indirect gap of ∼6  meV and resembles density functional band structure with itinerant 4f state.