Publications by authors named "Guowei Zha"

Two-field driving is the ultimate goal of field sequential color liquid crystal displays (FSC-LCDs) because it requires the lowest refresh rate and transmission bandwidth in addition to the intrinsic advantages of FSC-LCDs, e.g., tripled light efficiency and spatial resolution.

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The inhomogeneous broadening of the bi-exciton state in quantum dots, i.e., the inhomogeneous broadening of the upper level of the cascade process, is not only a fundamental problem in quantum dots, but also closely related with the coherent control of this complex system and the quality of the entangled photon pairs, especially the time-bin entangled photon pairs.

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Quantum emitters generating individual entangled photon pairs (IEPP) have significant fundamental advantages over schemes that suffer from multiple photon emission, or schemes that require post-selection techniques or the use of photon-number discriminating detectors. Quantum dots embedded within nanowires (QD-NWs) represent one of the most promising candidate for quantum emitters that provide a high collection efficiency of photons. However, a quantum emitter that generates IEPP in the telecom band is still an issue demanding a prompt solution.

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Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan-Lukin-Cirac-Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate.

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The realization of fiber-output single photon sources is necessary for quantum photonics. Here we present in situ probing and integration of single self-assembled quantum dots (QDs)-in-nanowires. Single self-assembled AlGaAs QDs were synthesized in GaAs/AlGaAs core-shell nanowires by molecular beam epitaxy and characterized by optical excitation in both micro-PL and fiber-integrating set-up.

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Fabrication of advanced artificial nanomaterials is a long-term pursuit to fulfill the promises of nanomaterials and it is of utter importance to manipulate materials at nanoscale to meet urgent demands of nanostructures with designed properties. Herein, we demonstrate the morphological tailoring of self-assembled nanostructures on faceted GaAs nanowires (NWs). The NWs are deposited on different kinds of substrates.

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Two types of quantum nanostructures based on self-assembled GaAs quantumdots embedded into GaAs/AlGaAs hexagonal nanowire systems are reported, opening a new avenue to the fabrication of highly efficient single-photon sources, as well as the design of novel quantum optics experiments and robust quantum optoelectronic devices operating at higher temperature, which are required for practical quantum photonics applications.

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Single nanostructures embedded within nanowires (NWs) represent one of the most promising technologies for applications in quantum photonics. However, fabrication imperfections and etching-induced defects are inevitable for top-down fabrications, whereas self-assembly bottom-up approaches cannot avoid the difficulties of its stochastic nature and are limited to restricted heterogeneous material systems. Here we demonstrate the versatile self-assembly of single "square" quantum rings (QR) on the sidewalls of gold-free GaAs NWs for the first time.

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We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is ~20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.

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