Publications by authors named "Guolin Wan"

Article Synopsis
  • Van der Waals (vdW) dielectrics are key for boosting the performance of nanoscale field-effect transistors (FETs) using 2D semiconductors, thanks to their clean interfaces and ideal electrical properties.
  • The study utilized a specialized algorithm to analyze a wide range of vdW materials and performed high-throughput calculations, identifying 9 promising dielectric candidates specifically suitable for MoS-based FETs.
  • Additionally, a novel machine learning model was created to enhance the screening process, leading to the discovery of 49 more potential vdW dielectrics, paving the way for improved 2D FET technologies.
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Skyrmion Hall effect (SkHE) remains an obstacle for the application of magnetic skyrmions. While methods have been established to cancel or compensate SkHE in artificial antiferromagnets and ferrimagnets, eliminating intrinsic SkHE in ferromagnets is still a big challenge. Here, we propose a strategy to eliminate SkHE by intercalating nonmagnetic elements into van der Waals bilayer ferromagnets featuring in-plane ferromagnetism.

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Realizating of a low work function (WF) and room-temperature stability in electrides is highly desired for various applications, such as electron emitters, catalysts, and ion batteries. Herein, a criterion based on the electron localization function (ELF) and projected density of states (PDOS) in the vacancy of the oxide electride [CaAlO](4e) (C12A7) was adopted to screen out 13 electrides in single-metal oxides. By creating oxygen vacancies in nonelectride oxides, we find out 9 of them showed vacancy-induced anionic electrons.

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Nonvolatile multistate manipulation of two-dimensional (2D) magnetic materials holds promise for low dissipation, highly integrated, and versatile spintronic devices. Here, utilizing density functional theory calculations and Monte Carlo simulations, we report the realization of nonvolatile and multistate control of topological magnetism in monolayer CrI by constructing multiferroic heterojunctions with quadruple-well ferroelectric (FE) materials. The PtSnTe/CrI heterojunction exhibits multiple magnetic phases upon modulating FE polarization states of FE layers and interlayer sliding.

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