Publications by authors named "Guole Wang"

The determination of the electronic structure by edge geometry is unique to graphene. In theory, an evanescent nonchiral edge state is predicted at the zigzag edges of graphene. Up to now, the approach used to study zigzag-edged graphene has mostly been limited to scanning tunneling microscopy.

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2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS . FETs with channel lengths scaling down to ≈4 nm can be realized reliably.

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Control of the precise lattice alignment of monolayer molybdenum disulfide (MoS ) on hexagonal boron nitride (h-BN) is important for both fundamental and applied studies of this heterostructure but remains elusive. The growth of precisely aligned MoS domains on the basal plane of h-BN by a low-pressure chemical vapor deposition technique is reported. Only relative rotation angles of 0° or 60° between MoS and h-BN basal plane are present.

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MoS2 nanoscrolls are formed by argon plasma treatment on monolayer MoS2 sheet. The nanoscale scroll formation is attributed to the partial removal of top sulfur layer in MoS2 during the argon plasma treatment process. This convenient, solvent-free, and high-yielding nanoscroll formation technique is also feasible for other 2D transition metal dichalcogenides.

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In this Letter, we report the observation of thermally induced rotation of graphene on hexagonal boron nitride (h-BN). After the rotation, two thermally stable configurations of graphene on h-BN with a relative lattice twisting angle of 0° (most stable) and 30° (metastable), respectively, were found. Graphene on h-BN with a twisting angle below (above) a critical angle of ∼12±2° tends to rotate towards 0° (30°) at a temperature of >100 °C, which is in line with our theoretical simulations.

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Due to the weak screening effect, the concentration and type of charge carriers in 2D semiconductor heterostructures can be effectively tuned by electrostatic gating, enabling us to realize different types of heterojunctions in a single device. Such 'type tunable' properties are useful for designing novel electrical or optoelectrical devices. Here, we demonstrate a 'type tunable' heterojunction device construct with two pieces of ambipolar 2D semiconductors: WSe2 and black phosphorus (BP).

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Nanographene is a promising alternative to metal nanoparticles or semiconductor nanocrystals for charge trapping memory. In general, a high density of nanographene is required in order to achieve high charge trapping capacity. Here, we demonstrate a strategy of fabrication for a high density of nanographene for charge trapping memory with a large memory window.

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Graphene-based strain sensors have attracted much attention recently. Usually, there is a trade-off between the sensitivity and resistance of such devices, while larger resistance devices have higher energy consumption. In this paper, we report a tuning of both sensitivity and resistance of graphene strain sensing devices by tailoring graphene nanostructures.

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Manipulation of an isolated water nanodroplet (WN) on certain surfaces is important to various nanofluidic applications but challenging. Here we present a digital nanofluidic system based on a graphene/water/mica sandwich structure. In this architecture, graphene provides a flexible protection layer to isolate WNs from the outside environment, and a monolayer ice-like layer formed on the mica surface acts as a lubricant layer to allow these trapped WNs to move on it freely.

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