Oriented BiTe-based films enabled high performance planar thermoelectric cooling device for hot spot elimination.

Film-thermoelectric cooling devices are expected to provide a promising active thermal management solution with the continues increase of the power density of integrated circuit chips and other electronic devices. However, because the microstructure-related performance of thermoelectric films has not been perfectly matched with the device configuration, the potential of planar devices on chip heat dissipation has still not been fully exploited. Here, by liquid Te assistant growth method, highly (00 l) orientated BiTe-based films which is comparable to single crystals are obtained in polycrystal films in this work.

Modulation of Vacancy Defects and Texture for High Performance n-Type Bi Te via High Energy Refinement.

The carrier concentration in n-type layered Bi Te -based thermoelectric (TE) material is significantly impacted by the donor-like effect, which would be further intensified by the nonbasal slip during grain refinement of crushing, milling, and deformation, inducing a big challenge to improve its TE performance and mechanical property simultaneously. In this work, high-energy refinement and hot-pressing are used to stabilize the carrier concentration due to the facilitated recovery of cation and anion vacancies. Based on this, combined with SbI doping and hot deformation, the optimized carrier concentration and high texture degree are simultaneously realized.