In this paper, we have studied the electrical excitation of plasma-wave in N-polar AlGaN/GaN high electron mobility transistors (HEMT) under asymmetric boundaries leads to terahertz emission. Numerical calculations are conducted through the simultaneous solution of Maxwell's equations and the self-consistent hydrodynamic model. By employing this method, we solved the plasma-wave model in the channel of an N-polar AlGaN/GaN HEMT.
View Article and Find Full Text PDFDietary l-carnitine produces γ-butylbetaine (γBB) in a gut-microbiota-dependent manner in humans, and has been proven to be an intermediate product possibly associated with incident cardiovascular diseases or major adverse events. Eliminating or reducing the production of microbiota-dependent γBB may contribute to adjuvant therapy for cardiovascular diseases. However, to date, our understanding of the γBB metabolic gene clusters (MGCs) and associated microorganisms remains limited.
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May 2024
Plant parasitic nematodes are significant contributors to yield loss worldwide, causing devastating losses to every crop species, in every climate. Mitigating these losses requires swift and informed management strategies, centered on identification and quantification of field populations. Current plant parasitic nematode identification methods rely heavily on manual analyses of microscope images by a highly trained nematologist.
View Article and Find Full Text PDFThe morphological characteristics of the GaN nonpolar sidewalls with different crystal plane orientations were studied under various TMAH wet treatment conditions, and the effect of different morphological features on device carrier mobility was modeled and analyzed. After TMAH wet treatment, the morphology of the -plane sidewall presents multiplied zigzag triangular prisms along the [0001] direction, which consist of two adjacent plane and -plane on top. While along the [112̅0] direction, the -plane sidewall is represented by thin, striped prisms with three -plane and a -plane on the side.
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