An Antagonistic Photovoltaic Memristor for Bioinspired Active Contrast Adaptation.

Machine vision systems that consist of cameras and image-processing components for visual inspection and identification tasks play a critical role in various intelligent applications, including pilotless vehicles and surveillance systems. However, current systems usually possess a limited dynamic range and fixed photoresponsivity, restricting their capability of gaining high-fidelity images when encoding a high-contrast scene. Here, it is shown that a photovoltaic memristor incorporating two antagonistic photovoltaic junctions can autonomously adjust its response to varying light stimuli, enabling the amplification of shadows and inhibition of highlight saturation.

Ni Single-Atoms Based Memristors with Ultrafast Speed and Ultralong Data Retention.

Memristor with low-power, high density, and scalability fulfills the requirements of the applications of the new computing system beyond Moore's law. However, there are still nonideal device characteristics observed in the memristor to be solved. The important observation is that retention and speed are correlated parameters of memristor with trade off against each other.

A visible light-triggered artificial photonic nociceptor with adaptive tunability of threshold.

An artificial photonic nociceptor that can accurately emulate the activation of a human visual nociceptive pathway is highly desired for the development of advanced intelligent optoelectronic information processing systems. However, the realization of such an artificial device needs sophisticated materials design and is pending to date. Herein, we demonstrate a visible light-triggered artificial nociceptor, with a simple ITO/CeO/Pt sandwich structure, that can well reproduce the pain-perceptual characteristics of the human visual system.

Magnetism modulation and conductance quantization in a gadolinium oxide memristor.

The requests for higher information storage density, greater data processing power, and memory-centric computing capability in the current big data era are motivating global research interests in novel solid-state electronic devices that can unite the electron charge and spin degrees of freedom. Herein, the simultaneous realization of magnetism modulation and conductance quantization in a single gadolinium oxide memristor is reported. A remarkable enhancement of >170% in saturation magnetization at room temperature, accompanied by the emergence of a clear magnetoresistance behavior at low temperature, was obtained after setting the memristor from the initial high resistance state (HRS) into the low resistance state (LRS).

Antibiotic use in pig farming and its associated factors in L County in Yunnan, China.

China has a long history of pig rearing, and it currently raises and consumes approximately half of the pigs in the world. Major improvements have been made in pig farming in China in the last four decades with the growing application of new livestock farming technologies. Among the new improvements, the use of antibiotics in pig farming is a common but not well-documented practise.

An Oxide Schottky Junction Artificial Optoelectronic Synapse.

The rapid development of artificial intelligence techniques and future advanced robot systems sparks emergent demand on the accurate perception and understanding of the external environments via visual sensing systems that can co-locate the self-adaptive detecting, processing, and memorizing of optical signals. In this contribution, a simple indium-tin oxide/Nb-doped SrTiO (ITO/Nb:SrTiO) heterojunction artificial optoelectronic synapse is proposed and demonstrated. Through the light and electric field co-modulation of the Schottky barrier profile at the ITO/Nb:SrTiO interface, the oxide heterojunction device can respond to the entire visible light region in a neuromorphic manner, allowing synaptic paired-pulse facilitation, short/long-term memory, and "learning-experience" behavior for optical information manipulation.

The hydrothermal evolution of the phase and shape of ZnS nanostructures and their gas-sensing properties.

This work presents the evolution of the phase and shape of ZnS along the hydrothermal holding time or the dosage of the surfactant. The ZnS sensor obviously showed phase-/defect-dependent gas-sensing performances indicating that the wurtzite-type structure, as well the defect will improve its gas-sensing activities.