Atomic Fabrication of 2D Materials Using Electron Beams Inside an Electron Microscope.

Two-dimensional (2D) materials have garnered increasing attention due to their unusual properties and significant potential applications in electronic devices. However, the performance of these devices is closely related to the atomic structure of the material, which can be influenced through manipulation and fabrication at the atomic scale. Transmission electron microscopes (TEMs) and scanning TEMs (STEMs) provide an attractive platform for investigating atomic fabrication due to their ability to trigger and monitor structural evolution at the atomic scale using electron beams.

The Coalescence Behavior of Two-Dimensional Materials Revealed by Multiscale Imaging during Chemical Vapor Deposition Growth.

Wafer-scale monocrystalline two-dimensional (2D) materials can theoretically be grown by seamless coalescence of individual domains into a large single crystal. Here we present a concise study of the coalescence behavior of crystalline 2D films using a combination of complementary methods. Direct observation of overlayer growth from the atomic to the millimeter scale and under model- and industrially relevant growth conditions reveals the influence of the film-substrate interaction on the crystallinity of the 2D film.

Fast Batch Production of High-Quality Graphene Films in a Sealed Thermal Molecular Movement System.

Chemical vapor deposition (CVD) growth of high-quality graphene has emerged as the most promising technique in terms of its integrated manufacturing. However, there lacks a controllable growth method for producing high-quality and a large-quantity graphene films, simultaneously, at a fast growth rate, regardless of roll-to-roll (R2R) or batch-to-batch (B2B) methods. Here, a stationary-atmospheric-pressure CVD (SAPCVD) system based on thermal molecular movement, which enables fast B2B growth of continuous and uniform graphene films on tens of stacked Cu(111) foils, with a growth rate of 1.

Kinetics of graphene formation on Rh(111) investigated by in situ scanning tunneling microscopy.

In situ scanning tunneling microscopy observations of graphene formation on Rh(111) show that the moiré pattern between the lattices of the overlayer and substrate has a decisive influence on the growth. The process is modulated in the large unit cells of the moiré pattern. We distinguish two steps: the addition of a unit cell that introduces one or more new kinks and the addition of further unit cells that merely advance the position of an existing kink.

How boron nitride forms a regular nanomesh on Rh(111).

Boron nitride forms nearly perfectly regular films with a thickness of precisely one atom on various metal surfaces. Here, we follow the formation of boron nitride layers on Rh(111) with scanning tunneling microscopy (STM) under realistic growth conditions, up to 1200 K. Our STM movies demonstrate in detail how the structure grows and how defects are introduced.