Anisotropic magnetoresistance in altermagnetic MnTe.

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity.

Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition.

Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting are documented within the framework of the non-relativistic spin group symmetry, there is limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a novel spin-splitting in the band structure. This study delves into the intricate relativistic electronic structure of an AM material, α-MnTe.

Persistence of Structural Distortion and Bulk Band Rashba Splitting in SnTe above Its Ferroelectric Critical Temperature.

The ferroelectric semiconductor α-SnTe has been regarded as a topological crystalline insulator, and the dispersion of its surface states has been intensively measured with angle-resolved photoemission spectroscopy (ARPES) over the past decade. However, much less attention has been given to the impact of the ferroelectric transition on its electronic structure, and in particular on its bulk states. Here, we investigate the low-energy electronic structure of α-SnTe with ARPES and follow the evolution of the bulk-state Rashba splitting as a function of temperature, across its ferroelectric critical temperature of about ≈ 110 K.

A Novel Ferroelectric Rashba Semiconductor.

Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization.

Efficient magnetic switching in a correlated spin glass.

The interplay between spin-orbit interaction and magnetic order is one of the most active research fields in condensed matter physics and drives the search for materials with novel, and tunable, magnetic and spin properties. Here we report on a variety of unique and unexpected observations in thin multiferroic GeMnTe films. The ferrimagnetic order parameter in this ferroelectric semiconductor is found to switch direction under magnetostochastic resonance with current pulses many orders of magnitude lower as for typical spin-orbit torque systems.

Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric α-GeTe(111).

Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, α-GeTe(111) is a non-centrosymmetric ferroelectric semiconductor for which a strong spin-orbit interaction gives rise to giant Rashba coupling. Its room temperature ferroelectricity was recently demonstrated as a route towards a new type of highly energy-efficient non-volatile memory device based on switchable polarization.

Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe.

A large Rashba effect is essential for future applications in spintronics. Particularly attractive is understanding and controlling nonequilibrium properties of ferroelectric Rashba semiconductors. Here, time- and angle-resolved photoemission is utilized to access the ultrafast dynamics of bulk and surface transient Rashba states after femtosecond optical excitation of GeTe.

Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators PbSnTe.

Topological crystalline insulators form a class of semiconductors for which surface electron states with the Dirac dispersion relation are formed on surfaces with a certain crystallographic orientation. PbSnTe alloys belong to the topological crystalline phase when the SnTe content exceeds 0.35, while they are in the trivial phase at < 0.

Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures.

Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, are generally averaging in momentum space.

Mn-Rich MnSb Te : A Topological Insulator with Magnetic Gap Closing at High Curie Temperatures of 45-50 K.

Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect, which is potentially useful for high-precision metrology, edge channel spintronics, and topological qubits.  The stable 2+ state of Mn enables intrinsic magnetic topological insulators. MnBi Te is, however, antiferromagnetic with 25 K Néel temperature and is strongly n-doped.

Triple-Point Fermions in Ferroelectric GeTe.

Ferroelectric α-GeTe is unveiled to exhibit an intriguing multiple nontrivial topology of the electronic band structure due to the existence of triple-point and type-II Weyl fermions, which goes well beyond the giant Rashba spin splitting controlled by external fields as previously reported. Using spin- and angle-resolved photoemission spectroscopy combined with ab initio density functional theory, the unique spin texture around the triple point caused by the crossing of one spin-degenerate and two spin-split bands along the ferroelectric crystal axis is derived. This consistently reveals spin winding numbers that are coupled with time-reversal symmetry and Lorentz invariance, which are found to be equal for both triple-point pairs in the Brillouin zone.

Topological quantum phase transition from mirror to time reversal symmetry protected topological insulator.

Topological insulators constitute a new phase of matter protected by symmetries. Time-reversal symmetry protects strong topological insulators of the Z class, which possess an odd number of metallic surface states with dispersion of a Dirac cone. Topological crystalline insulators are merely protected by individual crystal symmetries and exist for an even number of Dirac cones.

Ferroelectric phase transition in multiferroic Ge Mn Te driven by local lattice distortions.

The evolution of local ferroelectric lattice distortions in multiferroic Ge Mn Te is studied by x-ray diffraction, x-ray absorption spectroscopy and density functional theory. We show that the anion/cation displacements smoothly decrease with increasing Mn content, thereby reducing the ferroelectric transition from 700 to 100 K at = 0.5, where the ferromagnetic Curie temperature reaches its maximum.

Twin domain imaging in topological insulator BiTe and BiSe epitaxial thin films by scanning X-ray nanobeam microscopy and electron backscatter diffraction.

The twin distribution in topological insulators BiTe and BiSe was imaged by electron backscatter diffraction (EBSD) and scanning X-ray diffraction microscopy (SXRM). The crystal orientation at the surface, determined by EBSD, is correlated with the surface topography, which shows triangular pyramidal features with edges oriented in two different orientations rotated in the surface plane by 60°. The bulk crystal orientation is mapped out using SXRM by measuring the diffracted X-ray intensity of an asymmetric Bragg peak using a nano-focused X-ray beam scanned over the sample.

Negligible surface reactivity of topological insulators Bi2Se3 and Bi2Te3 towards oxygen and water.

The long-term stability of functional properties of topological insulator materials is crucial for the operation of future topological insulator based devices. Water and oxygen have been reported to be the main sources of surface deterioration by chemical reactions. In the present work, we investigate the behavior of the topological surface states on Bi2X3 (X = Se, Te) by valence-band and core level photoemission in a wide range of water and oxygen pressures both in situ (from 10(-8) to 0.

Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands.

For the prototypical Ge/Si(001) system, we show that at high growth temperature a new type of Stranski-Krastanow islands is formed with side facets steeper than {111} and high aspect ratio. Nano-goniometric analysis of the island shapes reveals the presence of six new facet groups in addition to those previously found for dome or barn-shaped islands. Due to the highly multi-faceted island shape and high aspect ratio, the new island types are named "cupola" islands and their steepest {12 5 3} side facet is inclined by 68°to the substrate surface.

Evaluation of ordering in single-component and binary nanocrystal superlattices by analysis of their autocorrelation functions.

Self-assembly of colloidal nanocrystals and other nanosized building blocks has led to numerous large-scale and well-ordered superstructures. To quantify the superlattice quality we present a simple and efficient method, based on analysis of the autocorrelation function to determine characteristic order parameters for short-range and long-range ordering. This provides a feedback for further improvements of deposition techniques and self-assembly processes.