Nanometric Moiré Stripes on the Surface of BiSe Topological Insulator.

Mismatch between adjacent atomic layers in low-dimensional materials, generating moiré patterns, has recently emerged as a suitable method to tune electronic properties by inducing strong electron correlations and generating novel phenomena. Beyond graphene, van der Waals structures such as three-dimensional (3D) topological insulators (TIs) appear as ideal candidates for the study of these phenomena due to the weak coupling between layers. Here we discover and investigate the origin of 1D moiré stripes on the surface of BiSe TI thin films and nanobelts.

Magnetotransport Studies of Encapsulated Topological Insulator BiSe Nanoribbons.

The majority of proposed exotic applications employing 3D topological insulators require high-quality materials with reduced dimensions. Catalyst-free, PVD-grown BiSe nanoribbons are particularly promising for these applications due to the extraordinarily high mobility of their surface Dirac states, and low bulk carrier densities. However, these materials are prone to the formation of surface accumulation layers; therefore, the implementation of surface encapsulation layers and the choice of appropriate dielectrics for building gate-tunable devices are important.

High-Yield Growth and Tunable Morphology of BiSe Nanoribbons Synthesized on Thermally Dewetted Au.

The yield and morphology (length, width, thickness) of stoichiometric BiSe nanoribbons grown by physical vapor deposition is studied as a function of the diameters and areal number density of the Au catalyst nanoparticles of mean diameters 8-150 nm formed by dewetting Au layers of thicknesses 1.5-16 nm. The highest yield of the BiSe nanoribbons is reached when synthesized on dewetted 3 nm thick Au layer (mean diameter of Au nanoparticles ~10 nm) and exceeds the nanoribbon yield obtained in catalyst-free synthesis by almost 50 times.

Size Distribution, Mechanical and Electrical Properties of CuO Nanowires Grown by Modified Thermal Oxidation Methods.

Size distribution, Young's moduli and electrical resistivity are investigated for CuO nanowires synthesized by different thermal oxidation methods. Oxidation in dry and wet air were applied for synthesis both with and without an external electrical field. An increased yield of high aspect ratio nanowires with diameters below 100 nm is achieved by combining applied electric field and growth conditions with additional water vapour at the first stage of synthesis.

Surface structure promoted high-yield growth and magnetotransport properties of BiSe nanoribbons.

In the present work, a catalyst-free physical vapour deposition method is used to synthesize high yield of BiSe nanoribbons. By replacing standard glass or quartz substrates with aluminium covered with ultrathin porous anodized aluminium oxide (AAO), the number of synthesized nanoribbons per unit area can be increased by 20-100 times. The mechanisms of formation and yield of the nanoribbons synthesized on AAO substrates having different arrangement and size of pores are analysed and discussed.

Investigating the mechanical properties of GeSn nanowires.

Germanium tin (GeSn) has been proposed as a promising material for electronic and optical applications due to the formation of a direct band-gap at a Sn content >7 at%. Furthermore, the ability to manipulate the properties of GeSn at the nanoscale will further permit the realisation of advanced mechanical devices. Here we report for the first time the mechanical properties of GeSn nanowires (7.

Bulk-free topological insulator BiSe nanoribbons with magnetotransport signatures of Dirac surface states.

Many applications of topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier densities, nanostructures have not yet been reported with similar properties, despite the fact that reduced dimensions should help diminish the contributions from bulk carriers. Here we demonstrate that BiSe nanoribbons, grown by a simple catalyst-free physical-vapour deposition, have inherently low bulk carrier densities, and can be further made bulk-free by thickness reduction, thus revealing the high mobility topological surface states.

Author Correction: Induced unconventional superconductivity on the surface states of BiTe topological insulator.

The original version of this Article contained an error in Fig. 6b. In the top scattering process, while the positioning of both arrows was correct, the colours were switched: the first arrow was red and the second arrow was blue, rather than the correct order of blue then red.

Author Correction: Induced unconventional superconductivity on the surface states of BiTe topological insulator.

The original version of this Article omitted the following from the Acknowledgements:"This work was partly supported by the Research Council of Norway through its Centres of Excellence funding scheme, project number 262633, QuSpin."This has now been corrected in both the PDF and HTML versions of the article.

Induced unconventional superconductivity on the surface states of BiTe topological insulator.

Topological superconductivity is central to a variety of novel phenomena involving the interplay between topologically ordered phases and broken-symmetry states. The key ingredient is an unconventional order parameter, with an orbital component containing a chiral p  + ip wave term. Here we present phase-sensitive measurements, based on the quantum interference in nanoscale Josephson junctions, realized by using BiTe topological insulator.