A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application.

The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (), saturation current density (), and cut-off frequency () of its high electron mobility transistor (HEMT) are simulated and analyzed. A novel optimization factor is proposed by considering the various performance parameters of the device to reduce the and improve the on the premise of ensuring the . Based on this factor, the optimized AlGaN/GaN epitaxial structure was designed with a barrier layer thickness of 20 nm, an Al component in the barrier layer of 25%, and a SiN passivation layer of 6 nm.

Mycoviral diversity and characteristics of a negative-stranded RNA virus LeNSRV1 in the edible mushroom Lentinula edodes.

Bioinformatics and RT-PCR analysis of RNA from four Lentinula edodes samples identified 22 different virus-like contigs comprising 15 novel and 3 previously reported viruses. We further investigated the Lentinula edodes negative-stranded RNA virus 1 (LeNSRV1) isolated from a symptomatic sample, whose virion is a filamentous particle with a diameter of ~15 nm and a length of ~1200 nm. RT-PCR analysis detected LeNSRV1 in 10 of the 56 Chinese L.