Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition.

HfO and FeO thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expectedly dominated by increasing the content of FeO.

Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition.

Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized and compared with those of undoped HfO films. The HfO reference films crystallized in the stable monoclinic phase of HfO. Mixing HfO and PrO resulted in the growth of nanocrystalline metastable tetragonal HfO.

Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures.

Non-volatile memory technology is now available in commodity hardware. This technology can be used as a backup memory for an external dram cache memory without needing to modify the software. However, the higher read and write latencies of non-volatile memory may exacerbate the memory wall problem.

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone.

Atomic layer deposition method was used to grow thin films consisting of ZrOand MnOlayers. Magnetic and electric properties were studied of films deposited at 300 °C. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such as the dependence of growth rate on the deposition temperature and film crystallinity.