Toward Exotic Silicon Doping with a Low Thermal Budget and Flexible Profile Control by Liquid-Phase Epitaxy.

We investigate semiconductor p-n junction formation by liquid-phase epitaxy (LPE) using metallic pastes incorporating traditional and nontraditional dopants. The LPE technique enables us to control the shape of doping profiles with a low thermal budget through the choice of solvent, total amount of solvent deposited, and process temperature. We focus here on the Al-B, Zn-P, and Sn-Ga chemistries to dope silicon regions using the chemicophysical properties of a low-eutectic-temperature metallic solvent acting as a matrix for the dissolution of a high concentration of a dopant.

Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency.

The nanostructuring of silicon surfaces--known as black silicon--is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might lead to both an increase in efficiency and a reduction in the manufacturing costs of solar cells. However, all previous attempts to integrate black silicon into solar cells have resulted in cell efficiencies well below 20% due to the increased charge carrier recombination at the nanostructured surface.