- The production of controlled doping in two-dimensional semiconductor materials like InSe is complicated due to varying crystallographic phases, impacting synthesis and applications.
- This study shows that the multiphase InSe with three structures (α, β, and δ) maintains chemical stability and performs well in n-type doping, with varying electronic properties detected using scanning tunneling spectroscopy.
- The diverse electronic bandgaps of the layered InSe make it suitable for applications in optical devices like detectors and solar cells, and its tunable properties enhance its potential for use in flexible electronics and heterostructures.