Effect of doping and defects on the electronic properties of MoS/WSe bilayer heterostructure: a first-principles study.

This work studies the effect of Nb, Mo, Re dopant, and Se vacancy in WSe on the electronic and optical properties of the MoS/WSe bilayer heterostructure based on first-principles calculations. Our research shows that the MoS/WSe bilayer heterostructure exhibits a type-II band alignment with a valence band offset (VBO) of 1.07 eV and a conduction band offset (CBO) of 1.

Effect of different waste plastic modifiers on conventional asphalt performance: optimal preparation parameters determination and mechanism analysis.

The typical treatment of waste plastics has become a global environmental problem. In light of recent developments, waste plastics used as asphalt modifiers offer an efficient approach to solve this problem. This paper studied the effects of three kinds of waste plastic-modified asphalts (WPMA), with polypropylene (PP), polyethylene (PE) and ethylene-vinyl acetate copolymer (EVA) as their respective modifiers, on the conventional asphalt performance.

Circulating or tissue microRNAs and extracellular vesicles as potential lung cancer biomarkers: a systematic review.

For both lung cancer patients and clinical physicians, tumor biomarkers for more efficient early diagnosis and prediction of prognosis are always wanted. Biomarkers in circulating serum, including microRNAs (miRNAs) and extracellular vesicles, hold the greatest possibilities to partially substitute for tissue biopsy. In this systematic review, studies on circulating or tissue miRNAs and extracellular vesicles as potential biomarkers for lung cancer patients were reviewed and are discussed.

Anisotropically biaxial strain in non-polar (112-0) plane In Ga N/GaN layers investigated by X-ray reciprocal space mapping.

In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In Ga N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In Ga N reciprocal lattice points progressively shifts from a fully compressive strained to a fully relaxed position, then to reversed tensile strained. To fully understand the strain in the ternary alloy layers, it is helpful to grow high-quality device structures using a-plane nitrides.

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates.

The growth of well-aligned nanorods on amorphous substrates can pave the way to fabricate large-scale and low-cost devices. In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. The products formed directly on bare glass are randomly oriented without preferential growth direction.

The immiscibility of InAlN ternary alloy.

We have used two models based on the valence force field and the regular solution model to study the immiscibility of InAlN ternary alloy, and have got the spinodal and binodal curves of InAlN. Analyzing the spinodal decomposition curves, we obtain the appropriate concentration region for the epitaxial growth of the InN-AlN pseudobinary alloy. At a temperature most common for the epitaxial growth of InAlN (1000 K), the solubility of InN is about 10%.

Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent.

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates.

Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN.

Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays.

Control over the nanostructure morphology and growth orientation is in high demand for fundamental research and technological applications. Herein we report a general strategy to fabricate polar c-axis and nonpolar m-axis well-aligned III-nitride ternary nanotube arrays with controllable morphologies and compositions. By depositing AlN on the InN nanorod array templates and thermally removing the InN templates, InAlN nanotubes can be obtained.

[Analysis of the key factors in SCID mouse-human leukemia model].

Objective: This study was to explore the key factors in leukemia model through the analysis of mouse with bad life state in the modeling process of leukemia so as to provide the theoretical reference for improving the success rate of modeling.

Methods: At 1 week after inoculation of leukemia cells into SCID mice, the life status and peripheral hemogram of SCID mice were tested, the bone marrow smears, splean biopsy and spleen index of mice were examined after dissecting mormal and agoned/died mice during modoling, and the examined results were compared.

Results: As compared with control mice, the life status of experimental mice was poor; the blood smear test showed juvenile cells, slightly more white blood cells with irregular shape and partial rupture, the lymphocytes and band cells obviously increased, the neutrophile granulocytes showed nuclear left shift; the bone marrow smears showed larger cell volume, smaller mulcoplasm, abnormal morphology of cells and cell nuclei and serious cell rapture; the spleen examination showed that the spleen diplayed enlargement and hyperemia to varying degree, the spleen index obviously increase, the spleen interstitial expansion, cell disordered arragement and irregular cell shope were observed, however there was no infiltration of leukemia cells in control and experimental mice.

Competitive growth mechanisms of AlN on Si (111) by MOVPE.

To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM).