Ferroelectric AlScN and HfZrO Domain Switching Dynamics.

The capability to reliably program partial polarization states with nanosecond programming speed and femtojoule energies per bit in ferroelectrics makes them an ideal candidate to realize multibit memory elements for high-density crossbar arrays, which could enable neural network models with a large number of parameters at the edge. However, a thorough understanding of the domain switching dynamics involved in the polarization reversal is required to achieve full control of the multibit capability. Transient current integration measurements are adopted to investigate the domain dynamics in aluminum scandium nitride (AlScN) and hafnium zirconium oxide (HfZrO).

Ectopic Cushing's Syndrome in Pediatric Age.

Background: Cushing's syndrome due to ectopic ACTH secretion is a rare clinical condition resulting from a dysregulated ACTH secretion by neuroendocrine tumors. The overall incidence of endogenous Cushing's syndrome is 0.7-2.

Kinetics of N- to M-Polar Switching in Ferroelectric AlScN Capacitors.

Ferroelectric wurtzite-type aluminum scandium nitride (AlScN) presents unique properties that can enhance the performance of non-volatile memory technologies. The realization of the full potential of AlScN requires a comprehensive understanding of the mechanism of polarization reversal and domain structure dynamics involved in the ferroelectric switching process. In this work, transient current integration measurements performed by a pulse switching method are combined with domain imaging by piezoresponse force microscopy (PFM) to investigate the kinetics of domain nucleation and wall motion during polarization reversal in AlScN capacitors.

Bilateral adrenal hemorrhage: learning notes from clinical practice and literature review.

Adrenal hemorrhage is a rare, but important, diagnosis to recognize, in particular when there is involvement of both adrenal glands. Bilateral adrenal hemorrhage can in fact lead to adrenal insufficiency, with dramatic consequences if not promptly recognized and treated. It is normally caused by systemic conditions that lead to the vasoconstriction and thrombosis of the adrenal vein.

Role of Defects in the Breakdown Phenomenon of AlScN: From Ferroelectric to Filamentary Resistive Switching.

Aluminum scandium nitride (AlScN), with its large remanent polarization, is an attractive material for high-density ferroelectric random-access memories. However, the cycling endurance of AlScN ferroelectric capacitors is far below what can be achieved in other ferroelectric materials. Understanding the nature and dynamics of the breakdown mechanism is of the utmost importance for improving memory reliability.

Thermal Stability of the Ferroelectric Properties in 100 nm-Thick AlScN.

The discovery of ferroelectricity in aluminum scandium nitride (AlScN) opens technological perspectives for harsh environments and space-related memory applications, considering the high-temperature stability of piezoelectricity in aluminum nitride. The ferroelectric and material properties of 100 nm-thick AlScN are studied up to 873 K, combining both electrical and in situ X-ray diffraction measurements as well as transmission electron microscopy and energy-dispersive X-ray spectroscopy. The present work demonstrates that AlScN can achieve high switching polarization and tunable coercive fields in a 375 K temperature range from room temperature up to 673 K.