Flat-lying semiconductor-insulator interfacial layer in DNTT thin films.

The molecular order of organic semiconductors at the gate dielectric is the most critical factor determining carrier mobility in thin film transistors since the conducting channel forms at the dielectric interface. Despite its fundamental importance, this semiconductor-insulator interface is not well understood, primarily because it is buried within the device. We fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) thin film transistors by thermal evaporation in vacuum onto substrates held at different temperatures and systematically correlated the extracted charge mobility to the crystal grain size and crystal orientation.

Air-Exposure-Induced Gas-Molecule Incorporation into Spiro-MeOTAD Films.

Combined photoemission and charge-transport property studies of the organic hole transport material 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-MeOTAD) under air exposure and controlled environments of O2, H2O + N2, and N2 (1 atm and under dark conditions) reveal the incorporation of gas molecules causing a decrease in charge mobility. Ultraviolet photoelectron spectroscopy shows the Fermi level shifts toward the highest occupied molecular orbital of spiro-MeOTAD when exposed to air, O2, and H2O resembling p-type doping. However, no traces of oxidized spiro-MeOTAD(+) are observed by X-ray photoelectron spectroscopy (XPS) and UV-visible spectroscopy.