Sustained release of hydrogen sulfide from anisotropic ferrofluid hydrogel for the repair of spinal cord injury.

Spinal cord injury (SCI) results in massive neuronal death, axonal disruption, and cascading inflammatory response, which causes further damage to impaired neurons. The survived neurons with damaged function fail to form effective neuronal circuits. It is mainly caused by the neuroinflammatory microenvironment at injury sites and regenerated axons without guidance.

1% Tetracaine hydrochloride injection pure solution aerosol inhalation combined with oral administration of dyclonine hydrochloride mucilage as upper airway anesthesia for bronchoscopy: A randomized controlled trial.

Background: During the bronchoscopy process, successful passage of the tracheoscope through the glottis can affect the following procedure of bronchoscopy. Therefore, safer, more effective and less painful anesthesia methods are particularly important for the bronchoscopy success rate.

Objective: This study aimed to evaluate the efficacy of 1% tetracaine hydrochloride injection pure solution aerosol inhalation combined with oral administration of dyclonine hydrochloride mucilage during bronchoscopy.

Application of three-step epitaxial process to dual trench epitaxial diode array.

The application of three-step Epitaxial (EPI) process to dual trench epitaxial diode array for high density phase change random access memory (PCRAM) was reported in this paper. With three-step EPI process condition, both vertical and lateral Arsenic auto-doping were suppressed effectively from Arsenic heavily-doped substrate. It was found that EPI layer (- 300 nm) with high-quality single crystalline and good thickness uniformity within 200 mm diameter wafer could be achieved.

Design of side bottom-electrode-contact for high density phase-change memory array.

In this work, a high density phase-change memory (PCM) array with advanced side bottom-electrode-contact (BEC) scheme, which is highly compatible with current complementary metal oxide semiconductor technology, has been proposed. The data storage capacity has been doubled than orthodoxy PCM structure and the contact area between bottom electrode and PCM cell shrinks from 20096 nm2 to 600 nm2. The optimized titanium nitride (TiN) film as side BEC is 10 nm due to trading off between RESET current and SET resistance.