Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation.

In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.

Evidence for Pseudocapacitance and Faradaic Charge Transfer in High-Mobility Thin-Film Transistors with Solution-Processed Oxide Dielectrics.

In developing low-power electronics, low-voltage transistors have been intensively investigated. One of the most important findings is that some high- oxide gate dielectrics can lead to remarkable enhancement of apparent mobility in thin-film transistors (TFTs), which is not clearly understood. Here, we investigate InO TFTs with solution-processed AlO dielectrics.

Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor.

In this study, a NiO-based resistive memristor was manufactured using a solution combustion method. In this device, both analog and digital bipolar resistive switching were observed. They are dependent on the stressed bias voltage.