25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate.

In this Letter, we present a comprehensive analysis of the high-speed performance of 940 nm oxide-confined AlGaAs vertical-cavity surface-emitting lasers (VCSELs) grown on Ge substrates. Our demonstration reveals a pronounced superiority of Ge-based VCSELs in terms of thermal stability. The presented Ge-VCSEL has a maximum modulation bandwidth of 16.

Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries.

Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, nanometer scale interdiffusion is common, which is generally undesirable for device performance. With higher Ge molar fractions and higher compressive strains, Si-Ge interdiffusion can be much faster than dopant diffusion.

Thermal sublimation: a scalable and controllable thinning method for the fabrication of few-layer black phosphorus.

We report uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning were confirmed by Raman spectra and Raman mapping. The sublimation rate of BP was around 0.