Ultrahigh power factors in P-type 1T-ZrX (X = S, Se) single layers.

The thermoelectric performances of 1T-ZrX (X = S and Se) single layers were investigated using a combination of density functional calculations and semi-classical Boltzmann transport theory. Because of the high hole mobilities at 300 K, ultrahigh power factors (PF=Sσ) were found in the P-type compounds; these values were ∼ 11.95 and ∼13.

SbS thickness-dependent lateral photovoltaic effect and time response observed in glass/FTO/CdS/SbS/Au structure.

As an interesting one dimensional ribbon material, SbS has recently attracted much attention in recent years due to its exciting optical properties. However, SbS-based photovoltaic or photoelectronic devices are still in research, and there are many things unknown to us and need to be well studied. In this work, the glass/FTO/CdS/SbS/Au structures were successfully prepared with different SbS thicknesses, and the lateral photovoltaic effect (LPE) was firstly observed in this structure, suggesting its great potential in position sensitivity detectors (PSD).

Lateral photovoltaic effect observed in doping-modulated GaAs/AlGaAs.

For photovoltaic effect (PE), both barrier height and carrier lifetime are all very important factors. However, how to distinguish their contributions to the PE is very difficult. In this paper, we prepared a series of GaAs/AlGaAs two dimensional electron gas (2DEG) with typical AlGaAs doping concentration of 0.

Variations of thermoelectric performance by electric fields in bilayer MX (M = W, Mo; X = S, Se).

A gate electrode is usually used to controllably tune the carrier concentrations, further modulating the electrical conductivity and the Seebeck coefficient to obtain the optimum thermoelectric figure of merit (ZT) in two-dimensional materials. On the other hand, it is necessary to investigate how an electric field induced by a gate voltage affects the electronic structures, further determining the thermoelectric properties. Therefore, by using density functional calculations in combination with Boltzmann theory, the thermoelectric properties of bilayer MX (M = W, Mo; X = S, Se) with or without a 1 V nm perpendicular electric field are comparatively investigated.

Thermoelectric properties of fullerene-based junctions: a first-principles study.

This study is built on density functional calculations in combination with the non-equilibrium Green's function, and we probe the thermoelectric transport mechanisms through C molecules anchored to Al nano-electrodes in three different ways, such as, the planar, pyramidal, and asymmetric surfaces. When the electrode is switched from the planar and pyramidal surfaces, the electrical conductance (σ) and electron's thermal conductance (κ) decrease almost two orders of magnitude due to the reduction of the molecule-electrode contact coupling, whereas the Seebeck coefficients (S) are reduced by ∼55%. Furthermore, the maximum electron's thermoelectric figure of merit (ZT = SσT/κ, assuming a vanishing phonon's thermal conductance) is about 0.

Strain and electric field co-modulation of electronic properties of bilayer boronitrene.

The electronic properties of bilayer strained boronitrenes are investigated under an external electric field using density functional methods. Our result is just the same as the previous conclusion: ie, that the electric field will reduce their band gaps. Except for the decrease of their band gaps, the degeneracy of π valence bands at K points will be lifted and the degenerate gap will increase with the electric field increasing.

Flatbands in 2D boroxine-linked covalent organic frameworks.

Density functional calculations have been performed to analyze the electronic and mechanical properties of a number of 2D boroxine-linked covalent organic frameworks (COFs), which are experimentally fabricated from di-borate aromatic molecules. Furthermore, the band structures are surprising and show flat-band characteristics which are mainly attributed to the delocalized π-conjugated electrons around the phenyl rings and can be better understood within aromaticity theories. Next, the effects of branch sizes and hydrostatic strains on their band structures are systematically considered within generalized gradient approximations.

[Effects of morphology evolution on surface plasmon resonance of nano-Ag films treated by different thermal annealing temperatures].

The nano-Ag films were prepared by RF magnetron sputtering technique, and all of them were treated by rapid thermal annealing at different temperatures. The structure, the morphology and the optical properties of the annealed nano-Ag films were characterized by X-ray diffraction, scanning electron microscopy, and UV-Vis-NIR spectroscopy. The experimental results show that the open area fraction of the film and spacing between islands or nanoparticles increase with the increase of the annealing temperature, while the aspect ratio decreases.

[Study of spectra characteristics of Dy3+ -activated LiSrBO3 phosphor].

The LiSrBO3:Dy3+ phosphor was synthesized by solid-state method. SrCO2 (99.9%), Li2CO3 (99.

[Bonding structure in silicon nitride thin films containing silicon nano-particles].

Non-stoichiometric hydrogenated amorphous silicon nitride (a-SiNx : H) film was deposited by helico-wave plasma-enhanced chemical vapour deposition (HWP-CVD) technique. The microstructure and bonding characteristics of both as-deposited and annealed thin films were studied. Raman scattering measurement shows that excess silicon exists in the form of amorphous silicon particles in the as-deposited sample.

[Effects of chemical sensitization on photoelectron time-resolved spectrum].

The time-resolved spectra of free photoelectrons and shallow-trapped electrons in the T-grains AgBrI emulsion were simultaneously detected with microwave absorption and dielectric spectrum detection technique. The results indicate that the electron trap effects of sulfur sensitization centers and sulfur-plus-gold sensitization centers are different with equal quantities of Na2S2O3 added. The sulfur sensitization centers acted as a deep electron trap to pick up the electronic decay because of increasing the number of deep trapped electrons, while the sulfur-plus-gold sensitization centers as a shallow electron trap decrease the electronic decay through effectively controlling the recombination between the electrons and the holes.

[Photoluminescence of nano-SiC annealed by pulse laser].

Nanocrystalline silicon carbon (nc-SiC) from amorphous silicon carbon films was obtained through XeCl excimer laser annealing. The photoluminescence (PL) of the nc-SiC was analyzed at different annealing laser energy density. It was observed that PL presented a wide luminescence band from 300-600 nm in the nc-SiC films.

[Photoelectron decay time-resolved spectrum of AgCl crystals doped with K4Ru(CN)6 complex].

Microwave absorption and film dielectric spectrum detection technology was used to study the influence of complex K4Ru (CN)6 on the photoelectron decay time-resolved spectrum of cubic AgCl crystals illuminated in this paper. The results indicate that the influence of the doping content and doping position of the complex K4Ru(CN)6 on the photoelectron decay time-resolved spectrum is evident. The photoelectron decay process of this emulsion is slowest, and the photoelectron lifetime is longest when doped with K4Ru (CN)6 of 2.

[The characteristic of photoelectron decay spectra in silver halide microcrystals].

Photoelectrons plays an important role in the latent image formation process of silver halide materials, and the decay characteristic of photoelectrons are dependent on the structure of silver halide microcrystals to a great extent. In this paper, the decay spectra of free photoelectrons and shallow-trapped electrons were obtained by optics and microwave double resonance technology. The depth and density of electron traps in silver halide microcrystals were discussed.

[Spectroscopic diagnoses of glow discharge plasma for the carbon nitride growth process].

Plasma diagnostics is performed during dc. glow discharge plasma-enhanced chemical vapor deposition (PECVD) on nitride thin films using optical emission spectra. Several molecular bands such as the second positive series of N2 transitions, the first negative series of N2+ and the CN, NH violet bands are identified.