Deep learning-based high-accuracy quantitation for lumbar intervertebral disc degeneration from MRI.

To help doctors and patients evaluate lumbar intervertebral disc degeneration (IVDD) accurately and efficiently, we propose a segmentation network and a quantitation method for IVDD from T2MRI. A semantic segmentation network (BianqueNet) composed of three innovative modules achieves high-precision segmentation of IVDD-related regions. A quantitative method is used to calculate the signal intensity and geometric features of IVDD.

Thermally Reduced Graphene Oxide/Carbon Nanotube Composite Films for Thermal Packaging Applications.

Thermally reduced graphene oxide/carbon nanotube (rGO/CNT) composite films were successfully prepared by a high-temperature annealing process. Their microstructure, thermal conductivity and mechanical properties were systematically studied at different annealing temperatures. As the annealing temperature increased, more oxygen-containing functional groups were removed from the composite film, and the percentage of graphene continuously increased.

Atomic Layer Deposition of Buffer Layers for the Growth of Vertically Aligned Carbon Nanotube Arrays.

Vertically aligned carbon nanotube arrays (VACNTs) show a great potential for various applications, such as thermal interface materials (TIMs). Besides the thermally oxidized SiO, atomic layer deposition (ALD) was also used to synthesize oxide buffer layers before the deposition of the catalyst, such as AlO, TiO, and ZnO. The growth of VACNTs was found to be largely dependent on different oxide buffer layers, which generally prevented the diffusion of the catalyst into the substrate.

Systematic Study of the SiO Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiO/SiO₂ Super-Lattice.

Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiO film with different stoichiometry by plasma enhanced atomic layer deposition.

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition.

In this study, silicon nitride (SiN) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates.