Research on Trimming Frequency-Increasing Technology for Quartz Crystal Resonator Using Laser Etching.

A quartz crystal resonator (QCR) is an indispensable electronic component in the field of the modern electronics industry. By designing and depositing electrodes of different shapes and thicknesses on a quartz wafer with a certain fundamental frequency, the desired target frequency can be obtained. Affected by factors such as the deposition equipment, mask, wafer size and placement position, it is difficult to accurately obtain the target frequency at a given time, especially for mass-produced QCRs.

[The impact of ZnS/CdS composite window layer on the quantun efficiency of CdTe solar cell in short wavelength].

ZnS/CdS composite window layer was prepared by magnetron sputtering method and then applied to CdTe solar cell. The morphology and structure of films were measured. The data of I-V in light and the quantum efficiency of CdTe solar cells with different window layers were also measured.

Spectral analysis of the effects of 1.7 MeV electron irradiation on the current transfer characteristic of cadmium telluride solar cells.

The effects of device performance of 1.7 MeV electron irradiation on cadmium telluride polycrystalline thin film solar cells with the structure of anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe : Cu/Ni have been studied. Light and dark I-V characteristics, dark C-V characteristics, quantum efficiency (QE), admittance spectrum (AS) and other testing methods were used to analyze cells performance such as the open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF) and conversion efficiency (eta).

[Preparation and properties of P-type Cd1-xZn(x)Te thin films].

Cd1-xZnxTe:Cu Thin films were prepared by co-evaporation method. X-ray Fluorescence Spectrometry (XRF), scanning electron microscope(SEM), UV-Vis transmission spectra, thermal probe, four-probe method, step profiler and X-ray diffractometer (XRD) were used to investigate the composition, structure, morphology, optical and electrical properties of Cd1-x ZnxTe:Cu thin films with different doping concentration. The results show that the resistivity of 10% copper doped Cd1-x ZnxTe films increased several magnitude and the conductive type changed from p-type to n-type after annealing.

[Study of the physical properties of SnS thin films deposited by ultrasonic spray pyrolysis method].

In the present paper, SnS thin films were deposited by ultrasonic spray pyrolysis method. The influence of the three different precursor concentrations on the properties of SnS thin films was compared. XRD shows that when precursor solution is thiourea (0.

[Spectral analysis of effects of annealing on the characteristics of intrinsic SnO2 polycrystalline thin films].

In order to improve the conversion efficiency of the CdTe solar cells, it is necessary to decrease the thickness of CdS layer. However, the decrease in CdS thickness may lead to adverse effects on the solar cells. Therefore, a high-resistance transparent layer (intrinsic SnO2) has been used as a buffer layer between the transparent conducting oxide (TCO) and CdS layer.