Structural basis of phage transcriptional regulation.

Phages are the most prevalent and diverse entities in the biosphere and represent the simplest systems that are capable of self-replication. Many fundamental concepts of transcriptional regulation were revealed through phage studies. The replication of phages within bacteria entails the hijacking of the host transcription machinery.

Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping.

We use transient electrical measurements to investigate the details of self-heating and charge trapping in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and operated under strongly nonequilibrium conditions. Relative to more standard devices fabricated on SiO substrates, encapsulation is shown to lead to an enhanced immunity to charge trapping, the influence of which is only apparent under the combined influence of strong gate and drain electric fields. Although the precise source of the trapping remains to be determined, one possibility is that the strong gate field may lower the barriers associated with native defects in the h-BN, allowing them to mediate the capture of energetic carriers from the graphene channel.

One-Step Approach to Polyester-Polyether Block Copolymers Using Highly Tunable Bicomponent Catalyst.

Phthalic anhydride and propylene/ethylene oxide are copolymerized at room temperature by a bicomponent metal-free catalyst comprising a mild phosphazene base and triethylborane. Provided with proper loadings of the two catalytic components, block copolymers with strict (AB)B type sequence structures and controlled molar mass (up to 60 kg mol) can be generated in one synthetic step, and the block architecture can be enriched by the use of mono-, di-, or tetrahydroxy initiators. The obtained polyester-polyether block copolymers readily undergo microphase-separation in bulk and nanoaggregation in selective (aqueous and alcoholic) solvents.

Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS Transistors.

Utilizing an innovative combination of scanning-probe and spectroscopic techniques, supported by first-principles calculations, we demonstrate how electron-beam exposure of field-effect transistors, implemented from ultrathin molybdenum disulfide (MoS), may cause nanoscale structural modifications that in turn significantly modify the electrical operation of these devices. Quite surprisingly, these modifications are induced by even the relatively low electron doses used in conventional electron-beam lithography, which are found to induce compressive strain in the atomically thin MoS. Likely arising from sulfur-vacancy formation in the exposed regions, the strain gives rise to a local widening of the MoS bandgap, an idea that is supported both by our experiment and by the results of first-principles calculations.