Mixed domain coherent link with electrically reconfigurable IMDD and coherent modes for O-band data center applications.

We report the first O-band link with electrically reconfigurable intensity-modulation direct-detection (IMDD) and coherent operation using custom silicon photonic chips packaged with commercial electronic chips. Transmission below the KP4-FEC threshold is shown using commercial 53 Gbaud PAM4 digital signal processing (DSP) for 16QAM (200 Gbps/λ) and PAM4 (100 Gbps/λ). Efficient operation of the packaged full link at 12 and 11.

Chemical Structure and Shape Enhance MR Imaging-Guided X-ray Therapy Following Marginative Delivery.

Ineffective site-specific delivery has seriously impeded the efficacy of nanoparticle-based drugs to a disease site. Here, we report the preparation of three different shapes (sphere, scroll, and oblate) to systematically evaluate the impact of the marginative delivery on the efficacy of magnetic resonance (MR) imaging-guided X-ray irradiation at a low dose of 1 Gy. In addition to the shape effect, the therapeutic efficacy is investigated for the first time to be strongly related to the structure effect that is associated with the chemical activity.

Widely tunable semiconductor lasers with three interferometric arms.

We present a comprehensive study for a new three-branch widely tunable semiconductor laser based on a self-imaging, lossless multi-mode interference (MMI) coupler. We have developed a general theoretical framework that is applicable to all types of interferometric lasers. Our analysis showed that the three-branch laser offers high side-mode suppression ratios (SMSRs) while maintaining a wide tuning range and a low threshold modal gain of the lasing mode.

Physical model for high indium content InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red wavelengths (λ ~ 630 nm).

We present a physical model for recently demonstrated high indium content self-assembled In0.4Ga0.6N/GaN quantum dot (QD)-based ridge-waveguide lasers emitting at red wavelengths.

Detailed model for the In0.18Ga0.82N/GaN self-assembled quantum dot active material for λ = 420 nm emission.

We present a comprehensive model for In(0.18)Ga(0.82)N/GaN self-assembled quantum dot (QD) active material.

Comprehensive model of 1550 nm MEMS-tunable high-contrast-grating VCSELs.

A comprehensive theoretical model for the long-wavelength micro-electro-mechanical-tunable high-contrast-grating vertical-cavity surface-emitting lasers is presented. Our band structure model calculates the optical gain and spontaneous emission of the InGaAlAs quantum well active region. The grating reflectivity and the cavity resonance condition are investigated through optical modeling.