In-Plane Anisotropy of Electrical Transport in YTbBaCuO Films.

We fabricated high-quality c-axis-oriented epitaxial YBaCuO films with 15% of the yttrium atoms replaced by terbium (YTBCO) and studied their electrical properties. The Tb substitution reduced the charge carrier density, resulting in increased resistivity and decreased critical current density compared to pure YBaCuO films. The electrical properties of the YTBCO films showed an in-plane anisotropy in both the superconducting and normal states that, together with the XRD data, provided evidence for, at least, a partially twin-free film.

Phase-Selective Epitaxy of Trigonal and Orthorhombic Bismuth Thin Films on Si (111).

Over the past three decades, the growth of Bi thin films has been extensively explored due to their potential applications in various fields such as thermoelectrics, ferroelectrics, and recently for topological and neuromorphic applications, too. Despite significant research efforts in these areas, achieving reliable and controllable growth of high-quality Bi thin-film allotropes has remained a challenge. Previous studies have reported the growth of trigonal and orthorhombic phases on various substrates yielding low-quality epilayers characterized by surface morphology.

Aharonov-Bohm Interference and Phase-Coherent Surface-State Transport in Topological Insulator Rings.

We present low-temperature magnetotransport measurements on selectively grown SbTe-based topological insulator ring structures. These devices display clear Aharonov-Bohm oscillations in the conductance originating from phase-coherent transport around the ring. The temperature dependence of the oscillation amplitude indicates that the Aharonov-Bohm oscillations originate from ballistic transport along the ring arms.

Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks.

Quasi-one-dimensional (1D) topological insulators hold the potential of forming the basis of novel devices in spintronics and quantum computing. While exposure to ambient conditions and conventional fabrication processes are an obstacle to their technological integration, ultra-high vacuum lithography techniques, such as selective area epitaxy (SAE), provide all the necessary ingredients for their refinement into scalable device architectures. In this work, high-quality SAE of quasi-1D topological insulators on templated Si substrates is demonstrated.

Supercurrent in BiTe Topological Material-Based Three-Terminal Junctions.

In this paper, in an in situ prepared three-terminal Josephson junction based on the topological insulator Bi4Te3 and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent, including coupling effects between adjacent superconducting electrodes. The observed dynamics for the coupling of the junctions is interpreted using a numerical simulation of a similar geometry based on a resistively and capacitively shunted Josephson junction model.

Integration of Topological Insulator Josephson Junctions in Superconducting Qubit Circuits.

The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we report on the realization of superconducting transmon qubits implemented with (BiSb)Te topological insulator (TI) JJs using ultrahigh vacuum fabrication techniques.

Reappearance of first Shapiro step in narrow topological Josephson junctions.

In Josephson junctions, a supercurrent across a nonsuperconducting weak link is carried by electron-hole bound states. Because of the helical spin texture of nondegenerate topological surface states, gapless bound states are established in junctions with topological weak link. These have a characteristic 4π-periodic current phase relation (CΦR) that leads to twice the conventional Shapiro step separation voltage in radio frequency-dependent measurements.

Probing embedded topological modes in bulk-like GeTe-SbTe heterostructures.

The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While topological states at a surface, i.e.

Correction: Tantalum(v) 1,3-propanediolate β-diketonate solution as a precursor to sol-gel derived, metal oxide thin films.

[This corrects the article DOI: 10.1039/D0RA02558E.].

Phase-coherent loops in selectively-grown topological insulator nanoribbons.

We succeeded in the fabrication of topological insulator (BiSb)Te Hall bars as well as nanoribbons by means of selective-area growth using molecular beam epitaxy. By performing magnetotransport measurements at low temperatures information on the phase-coherence of the electrons is gained by analyzing the weak-antilocalization effect. Furthermore, from measurements on nanoribbons at different magnetic field tilt angles an angular dependence of the phase-coherence length is extracted, which is attributed to transport anisotropy and geometrical factors.

Tantalum(v) 1,3-propanediolate β-diketonate solution as a precursor to sol-gel derived, metal oxide thin films.

Tantalum oxide is ubiquitous in everyday life, from capacitors in electronics to ion conductors for electrochromic windows and electrochemical storage devices. Investigations into sol-gel deposition of tantalum oxide, and its sister niobium oxide, has accelerated since the 1980s and continues to this day. The aim of this study is to synthesize a near UV sensitive, air stable, and low toxicity tantalum sol-gel precursor solution for metal oxide thin films - these attributes promise to reduce manufacturing costs and allow for facile mass production.

Room temperature in-situ measurement of the spin voltage of a BiSbTe thin film.

One of the hallmarks of topological insulators (TIs), the intrinsic spin polarisation in the topologically protected surface states, is investigated at room temperature in-situ by means of four-probe scanning tunnelling microscopy (STM) for a BiSbTe thin film. To achieve the required precision of tip positions for measuring a spin signal, a precise positioning method employing STM scans of the local topography with each individual tip is demonstrated. From the transport measurements, the spin polarisation in the topological surface states (TSS) is estimated as p ~ 0.

Selective area growth and stencil lithography for in situ fabricated quantum devices.

The interplay of Dirac physics and induced superconductivity at the interface of a 3D topological insulator (TI) with an s-wave superconductor (S) provides a new platform for topologically protected quantum computation based on elusive Majorana modes. To employ such S-TI hybrid devices in future topological quantum computation architectures, a process is required that allows for device fabrication under ultrahigh vacuum conditions. Here, we report on the selective area growth of (Bi,Sb)Te TI thin films and stencil lithography of superconductive Nb for a full in situ fabrication of S-TI hybrid devices via molecular-beam epitaxy.

Influence of Te-Doping on Catalyst-Free VS InAs Nanowires.

We report on the growth of Te-doped catalyst-free InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e.

Phase-coherent transport in selectively grown topological insulator nanodots.

Oxidized Si(111) substrates were pre-structured by electron beam lithography and used as a substrate for the selective growth of three-dimensional topological insulators (TI) by molecular beam epitaxy. The patterned holes were filled up by the TI, i.e.

Nanoscale Near-Field Tomography of Surface States on (BiSb)Te.

Three-dimensional topological insulators (TIs) have attracted tremendous interest for their possibility to host massless Dirac Fermions in topologically protected surface states (TSSs), which may enable new kinds of high-speed electronics. However, recent reports have outlined the importance of band bending effects within these materials, which results in an additional two-dimensional electron gas (2DEG) with finite mass at the surface. TI surfaces are also known to be highly inhomogeneous on the nanoscale, which is masked in conventional far-field studies.

Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers.

Bismuth has been identified as a material of interest for electronic applications due to its extremely high electron mobility and quantum confinement effects observed at nanoscale dimensions. However, it is also the case that Bi nanostructures are readily oxidised in ambient air, necessitating additional capping steps to prevent surface re-oxidation, thus limiting the processing potential of this material. This article describes an oxide removal and surface stabilization method performed on molecular beam epitaxy (MBE) grown bismuth thin-films using ambient air wet-chemistry.

Electrical resistance of individual defects at a topological insulator surface.

Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (BiSb)Te topological insulator thin film.

BiTe is a dual topological insulator.

New three-dimensional (3D) topological phases can emerge in superlattices containing constituents of known two-dimensional topologies. Here we demonstrate that stoichiometric BiTe, which is a natural superlattice of alternating two BiTe quintuple layers and one Bi bilayer, is a dual 3D topological insulator where a weak topological insulator phase and topological crystalline insulator phase appear simultaneously. By density functional theory, we find indices (0;001) and a non-zero mirror Chern number.

Ultrafast photocurrents at the surface of the three-dimensional topological insulator BiSe.

Three-dimensional topological insulators are fascinating materials with insulating bulk yet metallic surfaces that host highly mobile charge carriers with locked spin and momentum. Remarkably, surface currents with tunable direction and magnitude can be launched with tailored light beams. To better understand the underlying mechanisms, the current dynamics need to be resolved on the timescale of elementary scattering events (∼10 fs).

Topological states and phase transitions in Sb2Te3-GeTe multilayers.

Topological insulators (TIs) are bulk insulators with exotic 'topologically protected' surface conducting modes. It has recently been pointed out that when stacked together, interactions between surface modes can induce diverse phases including the TI, Dirac semimetal, and Weyl semimetal. However, currently a full experimental understanding of the conditions under which topological modes interact is lacking.

Realization of a vertical topological p-n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures.

Three-dimensional (3D) topological insulators are a new state of quantum matter, which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p-n junction made of a heterostructure of two different binary 3D TI materials Bi2Te3 and Sb2Te3 epitaxially grown on Si(111).

Simultaneous integration of different nanowires on single textured Si (100) substrates.

By applying a texturing process to silicon substrates, we demonstrate the possibility to integrate III-V nanowires on (100) oriented silicon substrates. Nanowires are found to grow perpendicular to the {111}-oriented facets of pyramids formed by KOH etching. Having control of the substrate orientation relative to the incoming fluxes enables not only the growth of nanowires on selected facets of the pyramids but also studying the influence of the fluxes on the nanowire nucleation and growth.

High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors.

We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.