Room-temperature two-dimensional plasmonic crystal semiconductor lasers.

Room-temperature plasmonic-crystal lasers have been demonstrated with a square-lattice gold nano-pillar arrays on top of InGaAs/GaAs quamtum wells on a GaAs substrate. The lasing wavelength is tunable in the range of 865-1001 nm by varying the lattice period. The lasers exhibit an extremely narrow linewidth and small divergence angle so could have great potential for various applications.

Effect of Hole Shift on Threshold Characteristics of GaSb-Based Double-Hole Photonic-Crystal Surface-Emitting Lasers.

Photonic-crystal (PC) surface-emitting lasers (SELs) with double-hole structure in the square-lattice unit cell were fabricated on GaSb-based type-I InGaAsSb/AlGaAsSb heterostructures. The relative shift of two holes was varied within one half of the lattice period. We measured the lasing wavelengths and threshold pumping densities of 16 PC-SELs and investigated their dependence on the double-hole shift.

Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers.

We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling.

Threshold current temperature dependence of quantum-dot photonic crystal surface-emitting lasers with respect to gain-cavity detuning.

We investigate threshold current temperature dependence of electrically injected quantum-dot (QD) photonic crystal (PC) surface-emitting lasers (SELs) with respect to wavelength detuning between QD gain peak and PC cavity resonance. The lasing emissions cover wavelengths from 1283 nm to 1318 nm. Almost infinite characteristic temperature is realized at certain temperature range for PCSEL with large negative gain-cavity detuning.

Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure.

Low threshold and widely tunable InAs/GaAs quantum-dot lasers are implemented with grating-coupled external-cavity arrangement. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is not more than 0.9 kA/cm2 and no noticeable threshold jump is observed.