Self-Polarized P(VDF-TrFE)/Carbon Black Composite Piezoelectric Thin Film.

Self-polarized energy harvesting materials have seen increasing research interest in recent years owing to their simple fabrication method and versatile application potential. In this study, we systematically investigated self-polarized P(VDF-TrFE)/carbon black (CB) composite thin films synthesized on flexible substrates, with the CB content varying from 0 to 0.6 wt.

Low-Power AlGaN/GaN Triangular Microcantilever for Air Flow Detection.

This paper investigates an AlGaN/GaN triangular microcantilever with a heated apex for airflow detection utilizing a very simple two-terminal sensor configuration. Thermal microscope images were used to verify that the apex region of the microcantilever reached significantly higher temperatures than other parts under applied voltage bias. The sensor response was found to vary linearly with airflow rate when tested over a range of airflow varying from 16 to 2000 sccm.

Infrared Transmission Characteristics of Phase Transitioning VO on Various Substrates.

Infrared transmission characteristics of VO thin films synthesized on multiple substrates, using a low-pressure direct oxidation technique, have been characterized. Material characterization of these films indicates high material quality, which resulted in large variation of electrical and optical properties at phase transition. A change in optical transmissivity greater than 80% was observed for these films utilizing infrared (IR) laser illumination at 1550 nm.

Mechanical memory operations in piezotransistive GaN microcantilevers using Au nanoparticle-enhanced photoacoustic excitation.

Nonlinear oscillations in micro- and nanoelectromechanical systems have emerged as an exciting research area in recent years due to their promise in realizing low-power, scalable, and reconfigurable mechanical memory and logic devices. Here, we report ultralow-power mechanical memory operations utilizing the nonlinear oscillation regime of GaN microcantilevers with embedded piezotransistive AlGaN/GaN heterostructure field effect transistors as highly sensitive deflection transducers. Switching between the high and low oscillatory states of the nonlinear oscillation regime was demonstrated using a novel phase-controlled opto-mechanical excitation setup, utilizing a piezo actuator and a pulsed laser as the primary and secondary excitation sources, respectively.

Voltage triggered near-infrared light modulation using VO thin film.

Development of compact and fast modulators of infrared light has garnered strong research interests in recent years due to their potential applications in communication, imaging, and sensing. In this study, electric field induced fast modulation near-infrared light caused by phase change in VO thin films grown on GaN suspended membranes has been reported. It was observed that metal insulator transition caused by temperature change or application of electric field, using an interdigitated finger geometry, resulted in 7% and 14% reduction in transmitted light intensity at near-infrared wavelengths of 790 and 1550 nm, respectively.

Electrically or chemically tunable photodetector with ultra high responsivity using graphene/InN nanowire based mixed dimensional barristors.

In this work, an electrically/chemically tunable highly sensitive photodetector based on mixed dimensional heterojunction of graphene and planar InN nanowires (NW) is presented. Controlled partial oxidation of InN has been employed to effectively reduce the high surface carrier concentration of InN, which normally prevents it from forming good rectifying contact with graphene. The resulting surface modified InN NWs have been found to form excellent Schottky junction with graphene, with an increase in effective Schottky barrier height (SBH) by over 1.

Direct measurement of K ion efflux from neuronal cells using a graphene-based ion sensitive field effect transistor.

A graphene-based ion sensitive field effect transistor (GISFET) has been developed and investigated in terms of its ion sensing performance. The GISFET sensor was found to demonstrate a high detection sensitivity enabling direct measurement of K ion efflux from live cells. The sensing performance of the GISFET was directly compared to that of a commercial Si ISFET and very similar detection results were obtained, highlighting the promise of the GISFET sensor for ion-sensing applications.

H Detection Using Plasmonically Generated Surface Photoacoustic Waves in Pd Nanoparticle-Deposited GaN Microcantilevers.

Detection of H using plasmonic amplification of surface photoacoustic (SPA) waves generated in Pd nanoparticle-deposited GaN piezotransistive microcantilevers has been investigated using a pulsed 520 nm laser. Using 1.5 nm thickness of the Pd functionalization layer, H detection down to 1.

Investigation of AlGaN/GaN HFET and VO Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers.

The static and dynamic deflection transducing performances of piezotransistive AlGaN/GaN heterojunction field effect transistors (HFET) and piezoresistive VO thin films, fabricated on GaN microcantilevers of similar dimensions, were investigated. Deflection sensitivities were tuned with the gate bias and operating temperature for embedded AlGaN/GaN HFET and VO thin film transducers, respectively. The GaN microcantilevers were excited with a piezoactuator in their linear and nonlinear oscillation regions of the fundamental oscillatory mode.

Photoacoustic Detection of H and NH Using Plasmonic Signal Enhancement in GaN Microcantilevers.

Photoacoustic (PA) detection of H and NH using plasmonic excitation in Pt- and Pd-decorated GaN piezotransistive microcantilevers were investigated using pulsed 520-nm laser illumination. The sensing performances of 1-nm Pt and Pd nanoparticle (NP) deposited cantilever devices were compared, of which the Pd-coated sensor devices exhibited consistently better sensing performance, with lower limit of detection and superior signal-to-noise ratio (SNR) values, compared to the Pt-coated devices. Among the two functionalization layers, Pd-coated devices were found to respond only to H exposure and not to NH, while Pt-coated devices exhibited repeatable response to both H and NH exposures, highlighting the potential of the former in performing selective detection between these reducing gases.

Editorial for the Special Issue on MEMS/NEMS Sensors: Fabrication and Application.

MEMS sensors are currently undergoing a phase of exciting technological development, not only enabling advancements in traditional applications such as accelerometers and gyroscopes, but also in emerging applications such as microfluidics, thermoelectromechanical, and harsh environment sensors [...

Impact of oxygen plasma treatment on carrier transport and molecular adsorption in graphene.

Impact of plasma treatment on graphene's transport properties and interaction with gas molecules has been investigated with Raman, X-ray photoelectron spectroscopy, and Hall measurements. Experimental results indicate the formation of nanocrystalline domains and the enhanced fraction of adsorbed oxygen following oxygen plasma treatment, which correlates with a significant reduction in carrier mobility and an increase in carrier density. The oxygen plasma treated graphene was found to exhibit much stronger sensitivity toward NH molecules both in terms of magnitude and response rate, attributable to increased domain edges and oxygen adsorption related enhancement in p-type doping.

Piezoresistive Graphene/P(VDF-TrFE) Heterostructure Based Highly Sensitive and Flexible Pressure Sensor.

We report on a novel graphene/P(VDF-TrFE) heterostructure based highly sensitive, flexible, and biocompatible pressure/strain sensor developed through a facile and low-cost fabrication technique. The high piezoelectric coefficient of P(VDF-TrFE) coupled with outstanding electrical properties of graphene makes the sensor device highly sensitive, with an average sensitivity of 0.76 kPa, a gauge factor of 445, and signal-to-noise ratio of 60.

High Temperature AlGaN/GaN Membrane Based Pressure Sensors.

A highly sensitive Gallium Nitride (GaN) diaphragm based micro-scale pressure sensor with an AlGaN/GaN heterostructure field effect transistor (HFET) deflection transducer has been designed and fabricated for high temperature applications. The performance of the pressure sensor was studied over a pressure range of 20 kPa, which resulted in an ultra-high sensitivity of ~0.76%/kPa, with a signal-to-noise ratio as high as 16 dB, when biased optimally in the subthreshold region.

Highly Conductive and Transparent Reduced Graphene Oxide Nanoscale Films via Thermal Conversion of Polymer-Encapsulated Graphene Oxide Sheets.

Despite noteworthy progress in the fabrication of large-area graphene sheetlike nanomaterials, the vapor-based processing still requires sophisticated equipment and a multistage handling of the material. An alternative approach to manufacturing functional graphene-based films includes the employment of graphene oxide (GO) micrometer-scale sheets as precursors. However, search for a scalable manufacturing technique for the production of high-quality GO nanoscale films with high uniformity and high electrical conductivity is still continuing.

Dual-channel microcantilever heaters for volatile organic compound detection and mixture analysis.

We report on novel microcantilever heater sensors with separate AlGaN/GaN heterostructure based heater and sensor channels to perform advanced volatile organic compound (VOC) detection and mixture analysis. Operating without any surface functionalization or treatment, these microcantilevers utilize the strong surface polarization of AlGaN, as well as the unique heater and sensor channel geometries, to perform selective detection of analytes based on their latent heat of evaporation and molecular dipole moment over a wide concentration range with sub-ppm detection limit. The dual-channel microcantilevers have demonstrated much superior sensing behavior compared to the single-channel ones, with the capability to not only identify individual VOCs with much higher specificity, but also uniquely detect them in a generic multi-component mixture of VOCs.

Piezotransistive transduction of femtoscale displacement for photoacoustic spectroscopy.

Measurement of femtoscale displacements in the ultrasonic frequency range is attractive for advanced material characterization and sensing, yet major challenges remain in their reliable transduction using non-optical modalities, which can dramatically reduce the size and complexity of the transducer assembly. Here we demonstrate femtoscale displacement transduction using an AlGaN/GaN heterojunction field effect transistor-integrated GaN microcantilever that utilizes piezoelectric polarization-induced changes in two-dimensional electron gas to transduce displacement with very high sensitivity. The piezotransistor demonstrated an ultra-high gauge factor of 8,700 while consuming an extremely low power of 1.

Functionalized graphene/silicon chemi-diode H₂ sensor with tunable sensitivity.

A reverse bias tunable Pd- and Pt-functionalized graphene/Si heterostructure Schottky diode H2 sensor has been demonstrated. Compared to the graphene chemiresistor sensor, the chemi-diode sensor offers more than one order of magnitude higher sensitivity as the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially in reverse bias. The reverse bias operation also enables low power consumption, as well as modulation of the atomically thin graphene's Fermi level, leading to tunable sensitivity and detection of H₂ down to the sub-ppm range.

Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity.

Application of ion-sensitive field effect transistors for ion channel screening.

Cell-based screening assays are now widely used for identifying compounds that serve as ion channel modulators. However, instrumentation for the automated, real-time analysis of ion flux from clonal and primary cells is lacking. This study describes the initial development of an ion-sensitive field effect transistor (ISFET)-based screening assay for the acquisition of K(+) efflux data from cells cultured in multi-well plates.

Oxygen mediated synthesis of high quality InN nanowires above their decomposition temperature.

A novel method for synthesis of high quality InN nanowires, at temperatures well above their decomposition temperature, has been demonstrated by utilizing controlled oxygen flow in the growth chamber. Detailed structural and chemical analyses indicate that the nanowires consist of pure InN, with no evidence of In2O3 detected by any of the characterization methods. It is proposed that the oxygen, pre-adsorbed on the Au catalyst surface, assists in accelerating the decomposition of NH3 at the growth temperature by providing high concentration of atomic nitrogen to assist in the growth, and prevent decomposition of the InN nanowires, without getting incorporated in them.

Growth direction modulation and diameter-dependent mobility in InN nanowires.

Diameter-dependent electrical properties of InN nanowires (NWs) grown by chemical vapor deposition have been investigated. The NWs exhibited interesting properties of coplanar deflection at specific angles, either spontaneously, or when induced by other NWs or lithographically patterned barriers. InN NW-based back-gated field effect transistors (FETs) showed excellent gate control and drain current saturation behaviors.

Miniaturized implantable pressure and oxygen sensors based on polydimethylsiloxane thin films.

We demonstrate the application of polydimethylsiloxane (PDMS) thin films in highly sensitive pressure and oxygen sensors, designed for pressure and oxygen content measurements within the heart and blood vessels. PDMS thin film displacement as a result of pressure changes was transduced by a capacitive detection technique to produce quantitative measurement of absolute pressures. Oxygen measurements were obtained by transducing the current change between a Pt and an Ag/AgCl electrode on a glass substrate, with KCl soaked filter paper as the electrolytic media that is separated from the oxygen carrying fluid by a thin PDMS membrane.

NO₂ Detection Using Microcantilever Based Potentiometry.

A highly sensitive and novel sensor platform for gases and volatile chemicals using microcantilever based potentiometry is reported. A resonant cantilever is used to detect the changes in surface work functions of functionalized substrates caused by adsorption of target gas molecules. Surface work function (SWF) changes were measured for different functionalization layers made of transition metal oxide thin films with the flow of NO₂.

Biological templated synthesis of water-soluble conductive polymeric nanowires.

One-dimensional (1D) conductive nanowire is one of the most important components for the development of nanosized electronic devices, sensors, and energy storage units. Great progresses have been made to prepare the 1D-conducting polymeric nanofibers by the low concentration process or the synthesis with hard or soft templates. However, it still remains as a great challenge to prepare polymeric nanofibers with narrow dispersity, high aspect ratio, and good processibility.