Lead-Based Perovskites Significantly Suppress Dark Currents toward High-Performance Multilayer SnS/Perovskite Photodetectors.

Tin disulfide (SnS), a layered material analogous to two-dimensional transition metal dichalcogenides (TMDs), demonstrates excellent photoresponse capabilities. However, the relatively large dark current in multilayer SnS photodetectors limits their potential in high-performance photodetection. To address this issue, we introduce lead (Pb)-based halide perovskites as dark current suppression layers for the SnS photodetector.

Great reduction of the hole effective mass in wide bandgap semiconductors by highly mismatched alloying.

Many wide bandgap semiconductors suffer from a large hole effective mass, and inherent defects severely limit their performance. LiGaSe, as a direct wide bandgap selenide semiconductor, also faces such challenges. In this work, we present a strategy for valence band engineering of LiGaSe through high mismatch O-alloying.

Understanding the role of Niobium, Molybdenum and Tungsten in realizing of the transparent-type SnO.

Based on the density functional theory, the defective band structures (DBSs), ionization energy and formation energy for Niobium (Nb), Molybdenum (Mo) and Tungsten (W)-doped SnOare calculated. The DBSs show Nb, Mo and W substituting Sn (labeled as Nb, Moand W) could form the localized impurity states which are above the conduction band minimum (CBM). These characteristics can be attributed to the energy of dopants' d-orbitals are much higher than that of Sn-s and -d orbital as well as O-2p orbitals, and the dopants with their neighboring atoms would form the non-bonding impurity states.

Spin polarization in quantum point contact based on wurtzite topological quantum well.

Manipulating spin polarization in wide-gap wurtzite semiconductors is crucial for the development of high-temperature spintronics applications. A topological insulator revealed recently in wurtzite quantum wells (QWs) provides a platform to mediate spin-polarized transport through the polarization field-driven topological edges and large Rashba spin-orbit coupling (SOC). Here, we propose a spin-polarized device in a quantum point contact (QPC) structure based on ZnO/CdO wurtzite topological QWs.

Piezoelectric manipulation of spin-orbit coupling in a Wurtzite heterostructure.

The combination of piezoelectricity and spin-orbit coupling (SOC) effect makes wurtzite semiconductors attractive for the development of exotic spin-related physics as well as spintronic applications. Triggering piezoelectricity, particularly by an external stimulus, provides a new perspective for manipulating SOC, but until now, a comprehensive understanding of this mechanism is lacking. Herein, by means of self-consistent calculations and Löwdin perturbation approach, we have explored the manipulation of SOC in the wurtzite (Al, Ga)N/GaN heterostructure by external stress-induced piezoelectric polarization.

Walking on inclines alters the gait characteristics in patients with acute stroke.

Background: Stroke leads to severe difficulties in daily activities, even when performing a simple task, such as walking from one point to another. The first apparent compensatory strategy in stroke survivors during walking is to slow down the walking speed. Slowing down the walking speed directly reduces the step length and cadence and further increases the stance phase, double, and support time.

Pressure pain threshold and somatosensory abnormalities in different ages and functional conditions of post-stroke elderly.

Background: Somatosensory deficits and abnormal pain sensitivity are highly prevalent among stroke survivors, which negatively impacts their quality of life and recovery process. However, the factors for pressure pain threshold (PPT) and somatosensory abnormalities in post-stroke elderly remain unknown. The aim of this study was to explore the effects of age, side and other functional conditions, such as spasticity and motor functions, on PPT and sensory abnormalities among elderly after stroke.

Intra-rater and inter-rater reliability of pressure pain threshold assessment in stroke patients.

Background: As pain is a common symptom following a stroke, pressure pain threshold (PPT) assessment can be used to evaluate pain status or pain sensitivity of patients. However, the reliability of PPT test in stroke patients is still unknown.

Aim: To examine the intra- and inter-rater reliability of PPT measurements in poststroke survivors and explore their factors.

The Effects of Gender, Functional Condition, and ADL on Pressure Pain Threshold in Stroke Patients.

Background: Somatosensory impairments and pain are common symptoms following stroke. However, the condition of perception and pain threshold for pressure stimuli and the factors that can influence this in individuals with stroke are still unclear. This study aimed to investigate the gender differences in pressure pain threshold (PPT) and positive somatosensory signs for pressure stimuli, and explore the effects of joint pain, motor function, and activities of daily living (ADL) on pain threshold in post-stroke patients.

High-Performance Piezo-Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well.

III-nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo-phototronic effect on near-infrared intersubband absorption is explored based on polar GaN/AlN quantum wells. The results show that externally applied pressure leads to the redshift of absorption wavelength by reducing polarization field of the quantum well.

Piezotronic Transistor Based on Topological Insulators.

Piezotronics and piezophototronics are emerging fields by coupling piezoelectric, semiconductor, and photon excitation effects for achieving high-performance strain-gated sensors, LEDs, and solar cells. The built-in piezoelectric potential effectively controls carrier transport characteristics in piezoelectric semiconductor materials, such as ZnO, GaN, InN, CdS, and monolayer MoS. In this paper, a topological insulator piezotronic transistor is investigated theoretically based on a HgTe/CdTe quantum well.