Review on Perovskite Semiconductor Field-Effect Transistors and Their Applications.

Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties.

Air processed CsAgBiBr lead-free double perovskite high-mobility thin-film field-effect transistors.

This study focuses on the fabrication and characterization of CsAgBiBr double perovskite thin film for field-effect transistor (FET) applications. The CsAgBiBr thin films were fabricated using a solution process technique and the observed XRD patterns demonstrate no diffraction peaks of secondary phases, which confirm the phase-pure crystalline nature. The average grain sizes of the spin-deposited film were also calculated by analysing the statistics of grain size in the SEM image and was found to be around 412 (± 44) nm, and larger grain size was also confirmed by the XRD measurements.