Silicon-based materials have been the leading platforms for the development of classical information science and are now one of the major contenders for future developments in the field of quantum information science. In this short review paper, while discussing only some examples, I will describe how silicon Complementary-Metal-Oxide-Semiconductor (CMOS) compatible materials have been able to provide platforms for the observation of some of the most unusual transport phenomena in condensed matter physics.
View Article and Find Full Text PDFThe ability to apply gigahertz frequencies to control the quantum state of a single P atom is an essential requirement for the fast gate pulsing needed for qubit control in donor-based silicon quantum computation. Here, we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to ≈13 GHz to heavily phosphorus-doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one-dimensional leads.
View Article and Find Full Text PDF