Toward a Fully Analytical Contact Resistance Expression in Organic Transistors.

Contact resistance is a major characteristic of organic transistors, and its importance has received renewed attention due to the recent revelation of mobility overestimation. In this article, we propose a method to describe the contact resistance as a closed-form compact equation of the materials, interfaces, and geometrical parameters. The proposed model allows us to quantitatively understand the correlation between charge-injection and transport properties, while providing a tool for performance prediction and optimization.

Numerical Modeling of an Organic Electrochemical Transistor.

We develop a numerical model for the current-voltage characteristics of organic electrochemical transistors (OECTs) based on steady-state Poisson's, Nernst's and Nernst⁻Planck's equations. The model starts with the doping⁻dedoping process depicted as a moving front, when the process at the electrolyte⁻polymer interface and gradually moves across the film. When the polymer reaches its final state, the electrical potential and charge density profiles largely depend on the way the cations behave during the process.

Injection-modulated polarity conversion by charge carrier density control via a self-assembled monolayer for all-solution-processed organic field-effect transistors.

We demonstrated modulation of charge carrier densities in all-solution-processed organic field-effect transistors (OFETs) by modifying the injection properties with self-assembled monolayers (SAMs). The all-solution-processed OFETs based on an n-type polymer with inkjet-printed Ag electrodes were fabricated as a test platform, and the injection properties were modified by the SAMs. Two types of SAMs with different dipole direction, thiophenol (TP) and pentafluorobenzene thiol (PFBT) were employed, modifying the work function of the inkjet-printed Ag (4.

Nonlinear Transport in Organic Thin Film Transistors with Soluble Small Molecule Semiconductor.

Nonlinear transport is intensively explained through Poole-Frenkel (PF) transport mechanism in organic thin film transistors with solution-processed small molecules, which is, 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene. We outline a detailed electrical study that identifies the source to drain field dependent mobility. Devices with diverse channel lengths enable the extensive exhibition of field dependent mobility due to thermal activation of carriers among traps.

A TIPS-TPDO-tetraCN-Based n-Type Organic Field-Effect Transistor with a Cross-linked PMMA Polymer Gate Dielectric.

Recent improvement in the performance of the n-type organic semiconductors as well as thin gate dielectrics based on cross-linked polymers offers new opportunities to develop high-performance low-voltage n-type OFETs suitable for organic complementary circuits. Using TIPS-tetracyanotriphenodioxazine (TIPS-TPDO-tetraCN) and cross-linked poly(methyl methacrylate) (c-PMMA), respectively as n-type organic semiconductor and gate dielectric, linear regime field-effect mobility (1.8 ± 0.

Strongly correlated alignment of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene crystallites in solution-processed field-effect transistors.

The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.

Templating and charge injection from copper electrodes into solution-processed organic field-effect transistors.

Solution-processed organic field-effect transistors (OFETs) using chemically modified copper electrodes are reported. The purpose of this study is to shed light on the use of inexpensive copper electrodes in bottom-contact OFETs, which is consistent with the major goal of organic electronics: the realization of low-cost electronics. 6,13-Bis(triisopropylsilylethynyl)pentacene was used for solution-processed hole-transporting molecular films and pentafluorobenzenethiol was used to form self-assembled monolayers (SAMs) on the contact metals.

Copolythiophene-based water-gated organic field-effect transistors for biosensing.

This paper reports on the sensing of proteins using water-gated organic field-effect transistors. As a proof-of-concept, streptavidin and avidin were used, with a biotinylated polymer as the active sensing material. The latter is a copolythiophene modified to graft biotin by peptidic coupling.

Tuning the threshold voltage in electrolyte-gated organic field-effect transistors.

Low-voltage organic field-effect transistors (OFETs) promise for low power consumption logic circuits. To enhance the efficiency of the logic circuits, the control of the threshold voltage of the transistors are based on is crucial. We report the systematic control of the threshold voltage of electrolyte-gated OFETs by using various gate metals.

Advances in organic transistor-based biosensors: from organic electrochemical transistors to electrolyte-gated organic field-effect transistors.

Organic electronics have, over the past two decades, developed into an exciting area of research and technology to replace classic inorganic semiconductors. Organic photovoltaics, light-emitting diodes, and thin-film transistors are already well developed and are currently being commercialized for a variety of applications. More recently, organic transistors have found new applications in the field of biosensors.

Influence of substrate surface chemistry on the performance of top-gate organic thin-film transistors.

Organic thin-film transistor (OTFT) performance depends on the chemical characteristics of the interface between functional semiconductor/dielectric/conductor materials. Here we report for the first time that OTFT response in top-gate architectures strongly depends on the substrate chemical functionalization. Depending on the nature of the substrate surface, dramatic variations and opposite trends of the TFT threshold voltage (~±50 V) and OFF current (10(5)×!) are observed for both p- and n-channel semiconductors.

Self-assembly of an octanethiol monolayer on a gold-stepped surface.

We investigate the influence of the native staircase nanostructure of a Au(111) vicinal surface upon the self-assembly of alkylthiols. Through a comparison with standard alkylthiol SAMs deposited on Au(111) flat surfaces, we show that on the vicinal surface the octanethiol monolayer (OT SAM) reproduces the nanopatterned staircase structure, giving rise to a new kind of molecular layer self-ordered on the nanometer scale. The SAM's structure is determined by UHV STM and PM-IRRAS measurements and exhibits a specific behavior relative to the nanostructured substrate.

Modification of indium tin oxide films by alkanethiol and fatty acid self-assembled monolayers: a comparative study.

Indium tin oxide (ITO) substrates have been modified by alkanethiol and fatty acid self-assembled monolayers (SAMs). The SAMs were grown by dipping the cleaned surface into either a pure alkanethiol or a fatty acid dissolved in various solvents. They were characterized through contact angle, X-ray photoelectron (XPS) and infrared absorption-reflection spectroscopy (IRRAS).