Direct comparison of ferroelectric properties in HfZrO between thermal and plasma-enhanced atomic layer deposition.

Since the discovery of ferroelectricity in doped/alloyed HfO and ZrO thin film, many device engineers have been attracted to its sustainable ferroelectricity at the thickness of a few nanometer. While most of the previous studies have mainly focused on the ferroelectric properties of the thermally atomic layer deposited (THALD) HfZrO (HZO), the plasma-enhanced ALD (PEALD) HZO has not received much attention. In this work, a direct comparison between the two types of HZO thin films is carried out, where we found that a tradeoff exists between these two fabrication methods.