Publications by authors named "Gian Salis"

The inhomogeneous magnetic stray field of micromagnets has been extensively used to manipulate electron spin qubits. By means of micromagnetic simulations and scanning superconducting quantum interference device microscopy, we show that the polycrystallinity of the magnet and nonuniform magnetization significantly impact the stray field and corresponding qubit properties. The random orientation of the crystal axis in polycrystalline Co magnets alters the qubit frequencies by up to 0.

View Article and Find Full Text PDF

Hole spins in Ge/SiGe heterostructures have emerged as an interesting qubit platform with favourable properties such as fast electrical control and noise-resilient operation at sweet spots. However, commonly observed gate-induced electrostatic disorder, drifts, and hysteresis hinder reproducible tune-up of SiGe-based quantum dot arrays. Here, we study Hall bar and quantum dot devices fabricated on Ge/SiGe heterostructures and present a consistent model for the origin of gate hysteresis and its impact on transport metrics and charge noise.

View Article and Find Full Text PDF

For spin-based quantum computation in semiconductors, dephasing of electron spins by a fluctuating background of nuclear spins is a main obstacle. Here we show that this nuclear background can be precisely controlled in generic quantum dots by periodically exciting electron spins. We demonstrate this universal phenomenon in many-electron GaAs/AlGaAs quantum dot ensembles using optical pump-probe spectroscopy.

View Article and Find Full Text PDF

Position sensing with resolution down to the scale of a single atom is of key importance in nanoscale science and engineering. However, only optical-sensing methods are currently capable of non-contact sensing at such resolution over a high bandwidth. Here, we report a new non-contact, non-optical position-sensing concept based on detecting changes in a high-gradient magnetic field of a microscale magnetic dipole by means of spintronic sensors.

View Article and Find Full Text PDF

We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T(1) times agree very well with NMR data available for T>1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sublinear temperature dependence T(1)(-1) is proportional to T(0.

View Article and Find Full Text PDF