Thorough Wide-Temperature-Range Analysis of Pt/SiC and Cr/SiC Schottky Contact Non-Uniformity.

This paper evaluates the non-uniformity degree of platinum and chromium Schottky contacts on silicon carbide. The forward characteristics of experimental samples were acquired in a wide, 60-500 K, temperature range. Microstructural and conventional electrical characterizations were performed, revealing the presence of inhomogeneities on the contact surface.

PLL-Based Readout Circuit for SiC-MOS Capacitor Hydrogen Sensors in Industrial Environments.

For proper operation in real industrial conditions, gas sensors require readout circuits which offer accuracy, noise robustness, energy efficiency and portability. We present an innovative, dedicated readout circuit with a phase locked loop (PLL) architecture for SiC-MOS capacitor sensors. A hydrogen detection system using this circuit is designed, simulated, implemented and tested.

60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes.

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60-700 K, currently the widest range reported. The structure's layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used.

400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments.

This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal, which allows operation at temperatures up to 400 °C, with sensitivities over 2 mV/°C and excellent linearity (R > 99.99%).