Two-photon absorption in indirect gap semiconductors is a frequently encountered, but not well-understood phenomenon. To address this, the real-density matrix approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting.
View Article and Find Full Text PDFWe investigate the nonlinear refraction induced by Rydberg excitons in Cu_{2}O. Using a high-precision interferometry imaging technique that spatially resolves the nonlinear phase shift, we observe significant shifts at extremely low laser intensity near each exciton resonance. From this, we derive the nonlinear index n_{2}, present the n_{2} spectrum for principal quantum numbers n≥5, and report large n_{2} values of order 10^{-3} mm^{2}/mW.
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