Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis).

High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers () are of particular importance.

Sandwich double-decker Er(iii) and Yb(iii) complexes containing naphthalocyanine moiety: synthesis and investigation of the effect of a paramagnetic metal center.

Novel heteroleptic Er(iii) and Yb(iii) naphthalocyaninato-phthalocyaninates containing an octa-phenyl or octa-phenoxysubstituted naphthalocyanine deck were synthesised and identified by H NMR, EPR and high resolution MALDI-TOF/TOF mass spectrometry. Direct synthesis of novel homoleptic Yb(iii) bis (octa-phenylnaphthalocyaninate) was carried out. Downfield lanthanide induced shifts of the aromatic protons in target compounds were observed compared with the corresponding diamagnetic Lu(iii) complexes.