Selenium segregation in femtosecond-laser hyperdoped silicon revealed by electron tomography.

Doping of silicon with chalcogens (S, Se, Te) by femtosecond laser irradiation to concentrations well above the solubility limit leads to near-unity optical absorptance in the visible and infrared (IR) range and is a promising route toward silicon-based IR optoelectronics. However, open questions remain about the nature of the IR absorptance and in particular about the impact of the dopant distribution and possible role of dopant diffusion. Here we use electron tomography using a high-angle annular dark-field (HAADF) detector in a scanning transmission electron microscope (STEM) to extract information about the three-dimensional distribution of selenium dopants in silicon and correlate these findings with the optical properties of selenium-doped silicon.

A scheme for solving the plane-plane challenge in force measurements at the nanoscale.

Non-contact interaction between two parallel flat surfaces is a central paradigm in sciences. This situation is the starting point for a wealth of different models: the capacitor description in electrostatics, hydrodynamic flow, thermal exchange, the Casimir force, direct contact study, third body confinement such as liquids or films of soft condensed matter. The control of parallelism is so demanding that no versatile single force machine in this geometry has been proposed so far.