Magnetization reversal of [Co/Pd] perpendicular magnetic thin film dot on (Bi,La)(Fe,Co)Omultiferroic thin film by applying electric field.

A multilayer structure with a high-quality (Bi,La)(Fe,Co)Omultiferroic thin film/[Co/Pd] perpendicular magnetic thin film dots was fabricated for demonstrating magnetization reversal of [Co/Pd] dots under an applied electric field. Although the magnetization direction of the multiferroic thin film was reversed under the electric field, the magnetic properties of the multiferroic thin films were generally low. If the multiferroic thin film in this structure can control the magnetization direction of the highly functional magnetic thin film under an electric field, high-performance magnetic devices with low power consumption are easily obtained.

Magnetic properties of (BiLa)(Fe,Co)O films fabricated by a pulsed DC reactive sputtering and demonstration of magnetization reversal by electric field.

(BiLa)(Fe,Co)O multiferroic magnetic film were fabricated using pulsed DC (direct current) sputtering technique and demonstrated magnetization reversal by applied electric field. The fabricated (BiLa)(FeCo)O films exhibited hysteresis curves of both ferromagnetic and ferroelectric behavior. The saturated magnetization (M) of the multiferroic film was about 70 emu/cm.