In this paper, we are reporting on the fabrication of a porous silicon/Au and silicon filament/Au using the two-step Au-assisted chemical etching of p-type Si with a specific resistivity of 0.01, 1, and 12 Ω·cm when varying the Au deposition times. The structure analysis results show that with an increasing Au deposition time of up to 7 min, the thickness of the porous Si layer increases for the same etching duration (60 min), and the morphology of the layer changes from porous to filamentary.
View Article and Find Full Text PDFThe formation of porous silicon by Pd nanoparticles-assisted chemical etching of single-crystal Si with resistivity = 0.01 Ω·cm at 25 °C, 50 °C and 75 °C in HF/HO/HO solution was studied. Porous layers of silicon were studied by optical and scanning electron microscopy, and gravimetric analysis.
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