Resistive switching and electrical control of ferromagnetism in a Ag/HfO₂/Nb:SrTiO₃/Ag resistive random access memory (RRAM) device at room temperature.

Electrically induced resistive switching and modulated ferromagnetism are simultaneously found in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory device at room temperature. The bipolar resistive switching (RS) can be controlled by the modification of a Schottky-like barrier with an electron injection-trapped/detrapped process at the interface of HfO2-Nb:SrTiO3. The multilevel RS transition can be observed in the reset process with larger negative voltage sweepings, which is connected to the different degree of electron detrapping in the interfacial depletion region of the HfO2 layer during the reset process.