Low-power edge detection based on ferroelectric field-effect transistor.

Edge detection is one of the most essential research hotspots in computer vision and has a wide variety of applications, such as image segmentation, target detection, and other high-level image processing technologies. However, efficient edge detection is difficult in a resource-constrained environment, especially edge-computing hardware. Here, we report a low-power edge detection hardware system based on HfO-based ferroelectric field-effect transistor, which is one of the most potential non-volatile memories for energy-efficient computing.

High-Performance Solar-Blind Ultraviolet Photodetectors Based on a Ni/β-GaO Vertical Schottky Barrier Diode.

GaO Schottky photodiodes are being actively explored for solar-blind ultraviolet (SBUV) detection, owing to the fast photoresponse and easy fabrication. However, their performance, limited by the Schottky contact, mostly underperforms the expectations. Herein, a Ni/β-GaO vertical Schottky barrier diode (SBD) with an ultrathin anode electrode is demonstrated.

GaO Solar-Blind Deep-Ultraviolet Photodetectors with a Suspended Structure for High Responsivity and High-Speed Applications.

The wide-bandgap semiconductor material GaO exhibits great potential in solar-blind deep-ultraviolet (DUV) photodetection applications, including none-line-of-sight secure optical communication, fire warning, high-voltage electricity monitoring, and maritime fog dispersion navigation. However, GaO photodetectors have traditionally faced challenges in achieving both high responsivity and fast response time, limiting their practical application. Herein, the GaO solar-blind DUV photodetectors with a suspended structure have been constructed for the first time.

Theoretical Investigation of Rhodium-Decorated Gallium Nitride Nanotubes for Sulfur Hexafluoride Decomposition Products Sensing and Scavenging Applications.

Gas-insulated switchgear (GIS) plays an important role as a modern power distribution device in power plants and power stations, which is commonly filled with SF insulating gas. During the equipment operation, the inevitable partial discharge causes SF to be broken down into gas (SF, SOF, SO, and HS), which degrades the insulation performance of the GIS. This paper is devoted to the detection of partial discharge and the removal of SF and SOF, which are not conducive to insulation, by exploring new gas-sensing materials for characteristic gas detection.

Ambient Moisture-Induced Self Alignment of Polarization in Ferroelectric Hafnia.

The discovery of nanoscale ferroelectricity in hafnia (HfO) has paved the way for next generation high-density, non-volatile devices. Although the surface conditions of nanoscale HfO present one of the fundamental mechanism origins, the impact of external environment on HfO ferroelectricity remains unknown. In this study, the deleterious effect of ambient moisture is examined on the stability of ferroelectricity using HfZrO (HZO) films as a model system.

Hybrid mode for absorption enhancement in the GaO nanocavity photodetector with grating electrodes.

Gallium oxide ( ) photodetectors have drawn increased interest for their widespread applications ranging from military to civil. Due to the inherent oxygen vacancy defects, they seriously suffer from trade-offs that make them incompetent for high-responsivity, quick-response detection. Herein, a nanocavity photodetector assisted with grating electrodes is designed to break the constraint.

High-enhancement photoluminescence of monolayer MoS in hybrid plasmonic systems.

Monolayer molybdenum disulfide ( ) has a weak light-matter interaction due to ultrathin thickness, which limits its potential application in lasing action. In this study, we propose a hybrid structure consisting of a nanocavity and Au nanoparticles to enhance the photon emission efficiency of monolayer . Numerical simulations show that photoluminescence (PL) emission is significantly enhanced by introducing localized surface plasmon resonance (LSPR) to the proposed structure.

HfO-ZrO Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed.

HfO-ZrO ferroelectric films have recently gained considerable attention from integrated circuit researchers due to their excellent ferroelectric properties over a wide doping range and low deposition temperature. In this work, different HfO-ZrO superlattice (SL) FE films with varying periodicity of HfO (5 cycles)-ZrO (5 cycles) (SL), HfO (10 cycles)-ZrO (10 cycles) (SL), and HfO (15 cycles)-ZrO (15 cycles) (SL) were studied systematically. The HfZrO (HZO) alloy was used as a comparison device.

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor.

HfO-based ferroelectric field-effect transistors (FeFETs) are a promising candidate for multilevel memory manipulation and brain-like computing due to the multi-domain properties of the HfOFE films based polycrystalline structure. Although there have been many reports on the working mechanism of the HfO-based FeFET and improving its reliability, the impact of multi-domain effect on the effective carrier mobility () has not been carried out yet. The effectivedetermines the level of readout current and affects the accuracy of the precision of peripheral circuit.

Tunable asymmetric magnetoresistance in an FeGeTe/graphite/FeGeTe lateral spin valve.

van der Waals (vdW) ferromagnetic heterojunctions, characterized by an ultraclean device interface and the absence of lattice matching, have emerged as indispensable and efficient building blocks for future spintronic devices. In this study, we present a seldom observed antisymmetric magnetoresistance (MR) behavior with three distinctive resistance states in a lateral van der Waals (vdW) structure comprising FeGeTe (FGT)/graphite/FGT. In contrast to traditional spin valves governed by the magnetization configurations of ferromagnetic electrodes (FEs), this distinct feature can be attributed to the interaction between FGT and the FGT/graphite interface, which is primarily influenced by the internal spin-momentum locking effect.

Above-Room-Temperature Strong Ferromagnetism in 2D MnB Nanosheet.

Two-dimensional (2D) room-temperature (RT) ferromagnetic materials have amassed considerable interest in the field of fundamental physics for applications in next-generation spintronic devices owing to their physical properties. However, realizing strong RT ferromagnetism and a high Curie temperature () in these 2D magnetic materials remains challenging. Herein, we develop a 2D MnB nanosheet for known 2D ferromagnets that demonstrates strong RT ferromagnetism and a record-high above-RT of ∼585.

Realization of Robust and Ambient-Stable Room-Temperature Ferromagnetism in Wide Bandgap Semiconductor 2D Carbon Nitride Sheets.

Due to their weak intrinsic spin-orbit coupling and a distinct bandgap of 3.06 eV, 2D carbon nitride (CN) flakes are promising materials for next-generation spintronic devices. However, achieving strong room-temperature (RT) and ambient-stable ferromagnetism (FM) remains a huge challenge.

BP-based supervised learning algorithm for multilayer photonic spiking neural network and hardware implementation.

We introduce a supervised learning algorithm for photonic spiking neural network (SNN) based on back propagation. For the supervised learning algorithm, the information is encoded into spike trains with different strength, and the SNN is trained according to different patterns composed of different spike numbers of the output neurons. Furthermore, the classification task is performed numerically and experimentally based on the supervised learning algorithm in the SNN.

Ultrahigh thermal-efficient all-optical silicon photonic crystal nanobeam cavity modulator with TPA-induced thermo-optic effect.

We propose and experimentally demonstrate an on-chip all-optical silicon photonic crystal nanobeam cavity (PCNBC) modulator. With the advantages of the strong two-photon absorption (TPA)-induced thermo-optic (TO) effect, ultrahigh thermal-efficient tuning with π phase shift temperature difference ΔTπ of 0.77°C and power Pπ of 0.

GaN nanowires prepared by Cu-assisted photoelectron-chemical etching.

A novel Cu-assisted photoelectron-chemical etching is proposed to fabricate GaN nanowires. The functional mechanism of assisted metals, etchant concentrations, and the addition of HO was investigated based on theoretical analysis and experiments. The low-cost metal-assisted etchant (CuSO) proved more favorable than the conventional noble one (AgNO) for the preparation of GaN nanowires in this work.

Compact non-volatile ferroelectric electrostatic doping optical memory based on the epsilon-near-zero effect.

With the booming development of optoelectronic hybrid integrated circuits, the footprint and power consumption of photonic devices have become the most constraining factors for development. To solve these problems, this paper proposes a compact, extremely low-energy and non-volatile optical readout memory based on ferroelectric electrostatic doping and the epsilon-near-zero (ENZ) effect. The writing/erasing state of an optical circuit is controlled by electrical pulses and can remain non-volatile.

Performance improvement of a tunnel junction memristor with amorphous insulator film.

This study theoretically demonstrated the oxygen vacancy (V)-based modulation of a tunneling junction memristor (TJM) with a high and tunable tunneling electroresistance (TER) ratio. The tunneling barrier height and width are modulated by the V-related dipoles, and the ON and OFF-state of the device are achieved by the accumulation of V and negative charges near the semiconductor electrode, respectively. Furthemore, the TER ratio of TJMs can be tuned by varying the density of the ion dipoles (N), thicknesses of ferroelectric-like film (T) and SiO (T), doping concentration (N) of the semiconductor electrode, and the workfunction of the top electrode (TE).

Mechanical Polarization Switching in HfZrO Thin Film.

HfO-based films with high compatibility with Si and complementary metal-oxide semiconductors (CMOS) have been widely explored in recent years. In addition to ferroelectricity and antiferroelectricity, flexoelectricity, the coupling between polarization and a strain gradient, is rarely reported in HfO-based films. Here, we demonstrate that the mechanically written out-of-plane domains are obtained in 10 nm HfZr0O (HZO) ferroelectric film at room temperature by generating the stress gradient via the tip of an atomic force microscope.

Energy-efficient non-volatile ferroelectric based electrostatic doping multilevel optical readout memory.

Non-volatile multilevel optical memory is an urgent needed artificial component in neuromorphic computing. In this paper, based on ferroelectric based electrostatic doping (Fe-ED) and optical readout due to plasma dispersion effect, we propose an electrically programmable, multi-level non-volatile photonics memory cell, which can be fabricated by standard complementary-metal-oxide-semiconductor (CMOS) compatible processes. HfZrO (HZO) film is chosen as the ferroelectric ED layer and combines with polysilicon layers for an enhanced amplitude modulation between the carrier accumulation and the confined optical field.

Lateral waveguide scanner integration on surface-emitting mid-infrared lasers.

In this paper, a novel, to the best of our knowledge, monolithic non-mechanical semiconductor laser scanner in the mid-infrared (MIR) spectrum is proposed. A deflector above the active region at the substrate side is used for coupling the vertical light into a lateral substrate waveguide, which creates a chain of coherent emitters such as optical phased arrays (OPAs) for beam steering. The numerical simulation reveals that GaSb-based surface-emitting interband cascade lasers (SE-ICLs) are an excellent platform for waveguide scanner integration.