Field-effect-tuned lateral organic diodes.

The operation of organic diodes in solar cells and light-emitting displays strongly depends on the properties of the interfaces between hole- and electron-carrying organic semiconductors. Such interfaces are difficult to characterize, as they are usually buried under the surface or exist as an irregular "bulk heterojunction." Using a unique fluorinated barrier layer-based lithographic technique, we fabricated a lateral organic p-n junction, allowing the first observation of the potential at an organic p-n interface simultaneously with the charge transport measurements.