Raman scattering studies on very thin layers of gallium sulfide (GaS) as a function of sample thickness and temperature.

Gallium sulfide is a semiconducting material with a layered structure and a characteristic low interlayer interaction. Because of weak van der Waals forces, GaS crystals are relatively easy to exfoliate to very thin layers. In this work nanometric-GaS layers were obtained by a micro-mechanical exfoliation process and were transferred to Si/SiO substrate.

Structural properties, interface modes and magnetophonon resonances in the double quantum well structure.

The Double Quantum Well structure (DQWs) of special engineering providing a rectangular shape of QW's, is investigated. The Scanning Transmission Electron Microscopy (STEM) observations confirmed a high quality of interfaces and smooth change of the In-content in a rectangular shape QW. Micro-Raman experiment enabled to detect interface phonons in DQWs which are manifested in Magnetophonon Resonance.