Publications by authors named "Geanina Apachitei"

The data reported here was prepared to study the effects of calendering process on NMC622 cathodes using a 3-3-2 full factorial design of experiments. The data set consists of 18 unique combinations of calender roll temperature (85 °C, 120 °C, or 145 °C), electrode porosity (30%, 35%, or 40%), and electrode mass loading (120 g/m² or 180 g/m²). The reported physical characteristics of the electrodes include thickness, coating weight, maximum tensile strength, and density.

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Join counting, a standard technique in spatial autocorrelation analysis, has been used to quantify the clustering of carbon, fluorine and sodium in cross-sectioned anode and cathode samples. The sample preparation and EDS mapping steps are sufficiently fast for every coating from two Design of Experiment (DoE) test matrices to be characterised. The results show two types of heterogeneity in material distribution; gradients across the coating from the current collector to the surface, and clustering.

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Megtec Systems pilot-plant scale continuous convective coater. The data was generated as part of an experimental design involving the following coating-drying process variables and ranges: comma bar gap, 80-140 µm; web speed, 0.5-1.

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The structural, electronic, and magnetic properties of interfaces between epitaxial LaSrMnO and PbTiO have been explored via atomic resolution transmission electron microscopy of a functional multiferroic tunnel junction. Measurements of the polar displacements and octahedral tilting show the competition between the two distortions at the interface and demonstrate strong dependence on the polarization orientation. The density functional theory provides information on the electronic and magnetic properties, where the interface termination plays a crucial role in the screening mechanisms.

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Formation of domain walls in ferroelectrics is not energetically favourable in low-dimensional systems. Instead, vortex-type structures are formed that are driven by depolarization fields occurring in such systems. Consequently, polarization vortices have only been experimentally found in systems in which these fields are deliberately maximized, that is, in films between insulating layers.

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Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance.

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Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device.

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