Cubic Crystal Structure Formation and Optical Properties within the Ag-B-M-X (B = Sr, Pb; M = Si, Ge, Sn; X = S, Se) Family of Semiconductors.

Quaternary chalcogenide semiconductors are promising materials for energy conversion and nonlinear optical applications, with properties tunable primarily by varying the elemental composition and crystal structure. Here, we first analyze the connections among several cubic crystal structure types, as well as the orthorhombic AgPbGeS-type structure, reported for select members within the Ag-B-M-X (B = Sr, Pb; M = Si, Ge, Sn; X = S, Se) compositional space. Focusing on the Ag-Pb-Si-S and Ag-Sr-Sn-S systems, we show that one structure type, with the formulas AgPbSiS and AgSrSnS, is favored.

Structural, Optical, and Electronic Properties of Two Quaternary Chalcogenide Semiconductors: AgSrSiS and AgSrGeS.

Quaternary chalcogenide materials have long been a source of semiconductors for optoelectronic applications. Recent studies on I-II-IV-X (I = Ag, Cu, Li; II = Ba, Sr, Eu, Pb; IV = Si, Ge, Sn; X = S, Se) materials have shown particular versatility and promise among these compounds. These semiconductors take advantage of a diverse bonding scheme and chemical differences among cations to target a degree of antisite defect resistance.