Performance enhancement of nitrogen-polar GaN-based light-emitting diodes prepared by metalorganic chemical vapor deposition.

Nitrogen-polar (N-polar) III-nitride materials have great potential for application in long-wavelength light-emitting diodes (LEDs). However, the poor quality of N-polar nitride materials hinders the development of N-polar devices. In this work, we report the enhanced performance of N-polar GaN-based LEDs with an optimized InGaN/GaN double quantum well (DQW) structure grown by metalorganic chemical vapor deposition.

Performance enhancement of an N-polar nitride deep-ultraviolet light-emitting diode with compositionally graded p-AlGaN.

Highly efficient hole injection into a AlGaN quantum well is desirable in nitride deep-ultraviolet light-emitting diodes (DUV LEDs) for high optical performance. In this work, we report the observation of enhanced hole injection in the N-polar AlGaN-based DUV LEDs with compositionally graded p-AlxGaN (x = 0.65-0.

Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes.

Strain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition.

Accurate Monitoring Platform for the Surface Catalysis of Nanozyme Validated by Surface-Enhanced Raman-Kinetics Model.

Surface-enhanced Raman scattering (SERS) is a supersensitive technique for monitoring catalytic reactions. However, building a SERS-kinetics model to investigate catalytic efficiency on the surface or interface of the catalyst remains a great challenge. In the present study, we successfully obtained an excellent semiconducting SERS substrate, reduced MnCoO (R-MnCoO) nanotubes, whose favorable SERS sensitivity is mainly related to the promoted interfacial charge transfer caused by the introduction of oxygen vacancies as well as the electromagnetic enhancement effect.

High-Performance Ultraviolet Light-Emitting Diodes Using n-ZnO/p-hBN/p-GaN Contact Heterojunctions.

Effective ultraviolet light-emitting diodes (LEDs) were fabricated by clamping the n-ZnO films on the top of p-hBN/p-GaN/sapphire substrates. An ultraviolet emission originating from ZnO was measured from the diode under a forward bias, the electroluminescence (EL) spectra of which show a peak wavelength of ∼376 nm with a narrow full-width at half maximum of ∼12 nm. Compared with the reference diode fabricated by directly growing n-ZnO on the p-hBN substrates using metal-organic chemical vapor deposition, the proposed diode showed a dramatic increment of the EL intensity; meanwhile, its emission onset lowered down considerably.