Two-dimensional wide-bandgap GeSe vertical ultraviolet photodetectors with high responsivity and ultrafast response speed.

Germanium selenide (GeSe), as a typical member of 2D wide bandgap semiconductors (WBSs), shows great potential in ultraviolet (UV) optoelectronics due to its excellent flexibility, superior environmental stability, competitive UV absorption coefficient, and significant spectral selectivity. However, the GeSe-based UV photodetector suffers from high operation voltages and low photocurrent, which prevents its practical imaging applications. In this work, we report an elevated photocurrent generation in a vertical stacking graphene/GeSe/graphene heterostructure with low operation voltage and low power consumption.