Solar-Blind Photodetector Arrays Fabricated by Weaving Strategy.

The quest for solar-blind photodetectors (SBPDs) with exceptional optoelectronic properties for imaging applications has prompted the investigation of SBPD arrays. GaO, characterized by its ultrawide bandgap and low growth cost, has emerged as a promising material for solar-blind detection. In this study, SBPD arrays were fabricated by weaving Sn-doped β-GaO microbelts (MBs).

High-Performance UV-Vis Broad-Spectra Photodetector Based on a β-GaO/Au/MAPbBr Sandwich Structure.

The UV-vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV-vis PDs. This severely affects the practical application of UV-vis broad-spectra PDs.

GaO-Based Solar-Blind Position-Sensitive Detector for Noncontact Measurement and Optoelectronic Demodulation.

As a kind of photodetector, position-sensitive-detectors (PSDs) have been widely used in noncontact photoelectric positioning and measurement. However, fabrications and applications of solar-blind PSDs remain yet to be harnessed. Herein, we demonstrate a solar-blind PSD developed from a graphene/GaO Schottky junction with a 25-nanometer-thick GaO film, in which the absorption of the nanometer-thick GaO is enhanced by multibeam interference.

Wavelength-Tunable Ultraviolet Electroluminescence from Ga-Doped ZnO Microwires.

The usage of ZnO as active layers to fabricate hybrid heterojunction light-emitting diodes is expected to be an effective approach for ultraviolet light sources. Individual ZnO microwires with controlled gallium (Ga) incorporation (ZnO/Ga MWs) have been fabricated via a chemical vapor deposition method. It is found that with the increasing Ga-incorporated concentration, the near-band-edge (NBE) photoluminescence of the ZnO MWs blue-shifted gradually from 390 to 370 nm.

Wavelength-Tunable Electroluminescent Light Sources from Individual Ga-Doped ZnO Microwires.

Electrically driven wavelength-tunable light emission from biased individual Ga-doped ZnO microwires (ZnO:Ga MWs) is demonstrated. Single crystalline ZnO:Ga MWs with different Ga-doping concentrations have been synthesized using a one-step chemical vapor deposition method. Strong electrically driven light emission from individual ZnO:Ga MW based devices is realized with tunable colors, and the emission region is localized toward the center of the wires.

Rewritable Painting Realized from Ambient-Sensitive Fluorescence of ZnO Nanoparticles.

Paper, as one of the most important information carriers, has contributed to the development and transmission of human civilization greatly. Meanwhile, a serious problem of environmental sustainable development caused by the production and utilization of paper has been resulted to modern society. Therefore, a simple and green route is urgently demanded to realize rewritable painting on paper.